Apparatus and method for processing data in memory system

ABSTRACT

A memory system includes at least one memory device, including plural planes, each capable of storing data; and a controller coupled with the at least one memory device via plural channels and plural ways and suitable for transmitting data to the at least one memory device for a read operation or a write operation in response to a transmission order. The plural planes can include plural blocks respectively. The plural blocks can include multi-level cells respectively. The controller can include a mapping circuitry for determining the transmission order of the data based on a first order of the plural channels, a second order of the plural planes, a third order of the plural ways and a fourth order of bits stored in the multi-level cells.

CROSS-REFERENCE TO RELATED APPLICATION

This patent application claims priority to Korean Patent Application No.10-2018-0107820, filed on Sep. 10, 2018, the entire disclosure of whichis incorporated herein by reference.

TECHNICAL FIELD

Various embodiments of the disclosure generally relate to a memorysystem. Particularly, the embodiments relate to an apparatus and amethod for data transmission within a memory system including pluralchannels and plural ways.

BACKGROUND

Recently, the computer environment paradigm has shifted to ubiquitouscomputing, which enables a computer system to be used anytime andeverywhere. As a result, the use of portable electronic devices such asmobile phones, digital cameras, notebook computers and the like havebeen rapidly increasing. Such portable electronic devices typically useor include a memory system that uses or embeds at least one memorydevice, i.e., a data storage device. The data storage device can be usedas a main storage device or an auxiliary storage device of a portableelectronic device.

Unlike characteristics of a hard disk, a data storage device using anonvolatile semiconductor memory device has advantages such as excellentstability and durability, because it has no mechanical driving part(e.g., a mechanical arm), and has high data access speed and low powerconsumption. Examples of a memory system having such advantages, are adata storage device includes a USB (Universal Serial Bus) memory device,a memory card having various interfaces, a solid state drive (SSD) orthe like.

SUMMARY

Embodiments of the invention provide a memory system, a data processingsystem, and an operation process or a method, which can quickly andreliably process data into a memory device by reducing operationalcomplexity and performance degradation of the memory system, andenhancing usage efficiency of the memory device.

The disclosure can show a system and a method for speeding up datatransmission between at least one memory device and a host which areengaged with a memory system, or between the at least one memory deviceand a controller included in the memory system, via a plurality ofchannels or a plurality of ways included in a memory system. It ispossible to provide a method and an apparatus which can reduce noise andinterference due to data transfer while speedily transferring data inthe memory system.

The disclosure can provide a method and apparatus implemented with amemory system or a host and capable of reducing data interference via aplurality of data paths in the memory system, or between the memorysystem and host, to decrease a time spent on reading or programmingvoluminous data.

In an embodiment, a memory system can include at least one memorydevice, including plural planes, each capable of storing data; and acontroller coupled with the at least one memory device via pluralchannels and plural ways, and suitable for transmitting data to the atleast one memory device for a read operation or a write operation inresponse to a transmission order. The plural planes can include pluralblocks respectively and the plural blocks include multi-level cellsrespectively. The controller can include a mapping circuitry configuredto determine the transmission order of the data based on a first orderof the plural channels, a second order of the plural planes, a thirdorder of the plural ways and a fourth order of bits stored in themulti-level cells.

By way of example but not limitation, the controller can set apredetermined number of planes in the plural planes as a logical storageunit. The read operation or the write operation can be performed on abasis of logical storage unit. The mapping circuitry can sequentiallydetermine the transmission order in response to the first to fourthorders in each logical storage unit.

The at least one memory device can include a first buffer fortemporarily storing data having a size corresponding to that of thelogical storage unit. The controller includes a second buffer forstoring larger data than that of the first buffer.

In an embodiment, the mapping circuitry can change the first order afterthe data are transmitted based on the second order. The mappingcircuitry can change the third order after the data are transmittedbased on the first order, and change the fourth order after the data aretransmitted based on the third order.

In another embodiment, the mapping circuitry can change the fourth orderafter the data are transmitted based on the first order, and change thethird order after the data are transmitted based on the fourth order.

In an embodiment, the mapping circuitry can change the second orderafter the data are transmitted based on the first order. The mappingcircuitry can change the third order after the data are transmittedbased on the second order, and changes the fourth order after the dataare transmitted based on the third order.

In another embodiment, the mapping circuitry changes the fourth orderafter the data are transmitted based on the second order, and changesthe third order after the data are transmitted based on the fourthorder.

By way of example but not limitation, the mapping circuitry can beincluded in a memory interface engaged with the at least one memorydevice.

In an embodiment, the mapping circuitry can be included in a hostinterface engaged with a host or an external device.

In another embodiment, a method for operating a memory system caninclude determining a transmission order of data based on a first orderof plural channels, a second order of plural planes, a third order ofplural ways and a fourth order of bits stored in multi-level cells; andtransmitting the data to the at least one memory device in response tothe transmission order. The memory system can include at least onememory device, each including plural planes, capable of storing data,and a controller coupled with the at least one memory device via pluralchannels and plural ways, and suitable for performing a read operationor a write operation, wherein the plural planes include plural blocksrespectively and the plural blocks include multi-level cellsrespectively.

By way of example but not limitation, the method can further includesetting a predetermined number of planes in the plural planes as alogical storage unit, and performing the read operation or the writeoperation on a basis of logical storage unit.

The transmission order can be determined sequentially in response to thefirst to fourth orders in each logical storage unit.

For example, in the transmission order, the first order is changed afterthe data are transmitted based on the second order. In another example,in the transmission order, the second order is changed after the dataare transmitted based on the first order.

By way of example but not limitation, in the transmission order, thethird order is changed after the data are transmitted based on thesecond order, and the fourth order is changed after the data aretransmitted based on the third order.

For another example, in the transmission order, the fourth order ischanged after the data are transmitted based on the second order, andthe third order is changed after the data are transmitted based on thefourth order.

The transmission order determined based on the first to fourth orderscan be varied according to a size of data transmitted from or to the atleast one memory device.

In another embodiment, a memory system can include plural channels, eachincluding plural ways; a memory device including plural dies operativelycoupled to corresponding ones among the ways and each having pluralplanes of multi-level cells configuring logical multi-level pages; and acontroller operatively coupled to the channels and configured to access,on a basis of a logical storage unit amounting to a predetermined numberof planes, the multi-level cells according to an access hierarchy of thechannels, the planes, the logical multi-level pages and the ways in theorder listed.

In another embodiment, a memory system can include plural channels, eachincluding plural ways; a memory device including plural dies operativelycoupled to corresponding ones among the ways and each having pluralplanes of multi-level cells configuring logical multi-level pages; and acontroller operatively coupled to the channels and configured to access,on a basis of a logical storage unit amounting to a predetermined numberof planes, the multi-level cells according to an access hierarchy of thechannels, the planes, the ways and the logical multi-level pages in theorder listed.

BRIEF DESCRIPTION OF THE DRAWINGS

The description herein makes reference to the accompanying drawingswherein like reference numerals refer to like parts throughout theseveral views, and wherein:

FIG. 1 is a block diagram illustrating an example of a data processingsystem including a memory system in accordance with an embodiment of thedisclosure;

FIG. 2 is a diagram illustrating an example of a memory device includedin a memory system in accordance with an embodiment of the disclosure;

FIG. 3 is a diagram illustrating a non-volatile memory cell array inmemory blocks included in a memory device in accordance with anembodiment of the disclosure;

FIG. 4 is a diagram illustrating a memory device structure in a memorysystem in accordance with an embodiment of the disclosure;

FIGS. 5 and 6 are diagrams illustrating examples in which a memorysystem in accordance with embodiments of the disclosure performs aplurality of command operations corresponding to a plurality ofcommands;

FIG. 7 is a block diagram illustrating an example of a memory system inaccordance with an embodiment of the disclosure;

FIG. 8 is a block diagram illustrating an example of a memory device inaccordance with an embodiment of the disclosure;

FIGS.9A and 9B are block diagrams illustrating a mapping circuitry inaccordance with an embodiment of the disclosure;

FIGS. 10 to 14 are diagrams illustrating first to fifth methods for datatransmission from a controller to a memory device in accordance withembodiments of the disclosure;

FIGS. 15 and 16 are diagrams illustrating effects of the first to fifthmethods described in FIGS. 10 to 14;

FIG. 17 is a flow chart illustrating an operational method fortransferring data in a memory system; and

FIGS. 18 to 26 are diagrams schematically illustrating other examples ofdata processing systems including a memory system in accordance withembodiments of the invention.

DETAILED DESCRIPTION

Various examples of the disclosure are described below in more detailwith reference to the accompanying drawings. The disclosure may beembodied in other embodiments, forms and variations thereof and shouldnot be construed as being limited to the embodiments set forth herein.Rather, the described embodiments are provided so that this disclosureis thorough and complete, and will fully convey the disclosure to thoseskilled in the art to which this invention pertains. Throughout thedisclosure, like reference numerals refer to like parts throughout thevarious figures and examples of the disclosure. It is noted thatreference to “an embodiment,” “another embodiment” or the like does notnecessarily mean only one embodiment, and different references to anysuch phrase are not necessarily to the same embodiment(s).

It will be understood that, although the terms “first”, “second”,“third”, and so on may be used herein to describe various elements,these elements are not limited by these terms. These terms are used todistinguish one element from another element that otherwise have thesame or similar names. Thus, a first element in one instance may bereferred to as a second or third element in another instance withoutdeparting from the spirit and scope of the invention.

The drawings are not necessarily to scale and, in some instances,proportions may have been exaggerated in order to clearly illustratefeatures of the embodiments. When an element is referred to as beingconnected or coupled to another element, it should be understood thatthe former can be directly connected or coupled to the latter, orelectrically connected or coupled to the latter via one or moreintervening elements. Communication between two elements, whetherdirectly or indirectly connected/coupled, may be wired or wireless,unless the context indicates otherwise. In addition, it will also beunderstood that when an element is referred to as being “between” twoelements, it may be the only element between the two elements, or one ormore intervening elements may also be present.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention.

As used herein, singular forms are intended to include the plural formsand vice versa, unless the context clearly indicates otherwise. Thearticles ‘a’ and ‘an’ as used in this application and the appendedclaims should generally be construed to mean ‘one or more’ unlessspecified otherwise or clear from context to be directed to a singularform.

It will be further understood that the terms “comprises,” “comprising,”“includes,” and “including” when used in this specification, specify thepresence of the stated elements and do not preclude the presence oraddition of one or more other elements. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Unless otherwise defined, all terms including technical and scientificterms used herein have the same meaning as commonly understood by one ofordinary skill in the art to which the disclosure pertains in view ofthe present disclosure. It will be further understood that terms, suchas those defined in commonly used dictionaries, should be interpreted ashaving a meaning that is consistent with their meaning in the context ofthe disclosure and the relevant art, and will not be interpreted in anidealized or overly formal sense unless expressly so defined herein.

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the invention. Theinvention may be practiced without some or all of these specificdetails. In other instances, well-known process structures and/orprocesses have not been described in detail in order not tounnecessarily obscure the invention.

It is also noted, that in some instances, as would be apparent to thoseskilled in the relevant art, a feature or element described inconnection with one embodiment may be used singly or in combination withother features or elements of another embodiment, unless otherwisespecifically indicated.

Embodiments of the disclosure will be described in detail with referenceto the accompanied drawings.

In FIG. 1, a data processing system 100 in accordance with an embodimentof the disclosure is described. Referring to FIG. 1, the data processingsystem 100 may include a host 102 engaged or operatively coupled with amemory system 110.

The host 102 may include, for example, a portable electronic device suchas a mobile phone, an MP3 player and a laptop computer, or an electronicdevice such as a desktop computer, a game player, a television (TV), aprojector and the like.

The host 102 also includes at least one operating system (OS), which cangenerally adjust and control functions and operations performed in thehost 102. The OS can provide interoperability between the host 102engaged with the memory system 110 and the user needing and using thememory system 110. The OS may support functions and operationscorresponding to user's requests. By way of example but not limitation,the OS can be classified into a general operating system and a mobileoperating system according to mobility of the host 102. The generaloperating system may be split into a personal operating system and anenterprise operating system according to system requirements or a user'senvironment. The personal operating system, including Windows andChrome, may be subject to support services for general purposes. But theenterprise operating systems can be specialized for securing andsupporting high performance, and includes Windows servers, Linux, Unixand the like. Further, the mobile operating system may include anAndroid, an iOS, a Windows mobile and the like. The mobile operatingsystem may be subject to support services or functions for mobility(e.g., a power saving function). The host 102 may include a plurality ofoperating systems. The host 102 may execute multiple operating systemsinterlocked with the memory system 110, corresponding to user's request.The host 102 may transmit a plurality of commands corresponding touser's requests into the memory system 110, thereby performingoperations corresponding to commands within the memory system 110.Handling plural commands in the memory system 110 is described later,referring to FIGS. 6 and 7.

The memory system 110 may operate or perform a specific function oroperation in response to a request from the host 102 and, particularly,may store data to be accessed by the host 102. The memory system 110 maybe used as a main memory system or an auxiliary memory system of thehost 102. The memory system 110 may be implemented with any one ofvarious types of storage devices, which may be electrically coupled withthe host 102, according to a protocol of a host interface. Non-limitingexamples of suitable storage devices include a solid state drive (SSD),a multimedia card (MMC), an embedded MMC (eMMC), a reduced size MMC(RS-MMC), a micro-MMC, a secure digital (SD) card, a mini-SD, amicro-SD, a universal serial bus (USB) storage device, a universal flashstorage (UFS) device, a compact flash (CF) card, a smart media (SM)card, a memory stick, and the like.

The storage devices for the memory system 110 may be implemented with avolatile memory device, for example, a dynamic random access memory(DRAM) and a static RAM (SRAM), and/or a nonvolatile memory device suchas a read only memory (ROM), a mask ROM (MROM), a programmable ROM(PROM), an erasable programmable ROM (EPROM), an electrically erasableprogrammable ROM (EEPROM), a ferroelectric RAM (FRAM), a phase-changeRAM (PRAM), a magneto-resistive RAM (MRAM), a resistive RAM (RRAM orReRAM) and a flash memory.

The memory system 110 may include a controller 130 and a memory device150. The memory device 150 may store data to be accessed by the host102. The controller 130 may control storage of data in the memory device150.

The controller 130 and the memory device 150 may be integrated into asingle semiconductor device, which may be included in the various typesof memory systems as exemplified above.

By way of example but not limitation, the controller 130 and the memorydevice 150 may be integrated into a single semiconductor device. Suchintegration may improve operation speed. When the memory system 110 isused as an SSD, the operating speed of the host 102 connected to thememory system 110 can be improved to a greater extent than that of thehost 102 when the memory system 110 is implemented with a hard disk. Inanother embodiment, the controller 130 and the memory device 150 may beintegrated into one semiconductor device to form a memory card, e.g., aPC card (PCMCIA), a compact flash card (CF), a memory card such as asmart media card (SM, SMC), a memory stick, a multimedia card (MMC,RS-MMC, MMCmicro), a SD card (SD, miniSD, microSD, SDHC), a universalflash memory and the like.

The memory system 110 may be configured as a part of, for example, acomputer, an ultra-mobile PC (UMPC), a workstation, a net-book, apersonal digital assistant (PDA), a portable computer, a web tablet, atablet computer, a wireless phone, a mobile phone, a smart phone, ane-book, a portable multimedia player (PMP), a portable game player, anavigation system, a black box, a digital camera, a digital multimediabroadcasting (DMB) player, a 3-dimensional (3D) television, a smarttelevision, a digital audio recorder, a digital audio player, a digitalpicture recorder, a digital picture player, a digital video recorder, adigital video player, a storage configuring a data center, a devicecapable of transmitting and receiving information under a wirelessenvironment, one of various electronic devices configuring a homenetwork, one of various electronic devices configuring a computernetwork, one of various electronic devices configuring a telematicsnetwork, a radio frequency identification (RFID) device, or one ofvarious components configuring a computing system.

The memory device 150 may be a nonvolatile memory device that retainsdata stored therein even while electrical power is not supplied. Thememory device 150 may store data provided from the host 102 through awrite operation, while providing data stored therein to the host 102through a read operation. The memory device 150 may include a pluralityof memory blocks 152, 154, 156 . . . , each of which may include aplurality of pages. Each of the plurality of pages may include aplurality of memory cells to which a word line (WL) is electricallycoupled. The memory device 150 also includes a plurality of memory diesincluding a plurality of planes, each of which includes a plurality ofplanes, each of which includes a plurality of memory blocks 152, 154,156 . . . . In addition, the memory device 150 may be a non-volatilememory device, for example a flash memory, wherein the flash memory maybe a three dimensional stack structure.

A structure of the memory device 150 and/or a three-dimensional solidstack structure of the memory device 150 will be described in moredetail below with reference to FIGS. 3 to 5. The memory device 150including a plurality of memory dies each including a plurality ofplanes each including the plurality of memory blocks 152, 154, 156 . . .will be described in more detail in FIG. 6. Thus, detailed descriptionthereof is omitted here.

The controller 130 may control overall operations of the memory device150, such as read, write, program, and erase operations. For example,the controller 130 may control the memory device 150 in response to arequest from the host 102. The controller 130 may provide the data, readfrom the memory device 150, with the host 102. The controller 130 maystore the data, provided by the host 102, into the memory device 150.

The controller 130 may include a host interface (I/F) 132, a processor134, an error correction code (ECC) component 138, a power managementunit (PMU) 140, a memory interface (I/F) 142 and a memory 144, alloperatively coupled via an internal bus.

The host interface 132 may process commands and data provided from thehost 102, and may communicate with the host 102 through at least one ofvarious interface protocols such as a universal serial bus (USB),multimedia card (MMC), peripheral component interconnect-express (PCI-eor PCIe), small computer system interface (SCSI), serial-attached SCSI(SAS), serial advanced technology attachment (SATA), parallel advancedtechnology attachment (PATA), small computer system interface (SCSI),enhanced small disk interface (ESDI) and integrated drive electronics(IDE). In accordance with an embodiment, the host interface 132 is acomponent for exchanging data with the host 102, which may beimplemented through firmware called a host interface layer (HIL).

The ECC component 138 may correct error bits of the data to be processedin (e.g., outputted from) the memory device 150, which may include anECC encoder and an ECC decoder. Here, the ECC encoder can perform errorcorrection encoding of data to be programmed in the memory device 150 togenerate encoded data into which a parity bit is added, and store theencoded data in memory device 150. The ECC decoder can detect andcorrect errors contained in a data read from the memory device 150 whenthe controller 130 reads the data stored in the memory device 150. Inother words, after performing error correction decoding on the data readfrom the memory device 150, the ECC component 138 can determine whetherthe error correction decoding has succeeded and output an instructionsignal (e.g., a correction success signal or a correction fail signal).The ECC component 138 can use the parity bit which is generated duringthe ECC encoding process, for correcting the error bit of the read data.When the number of the error bits is greater than or equal to athreshold number of correctable error bits, the ECC component 138 maynot correct error bits but instead may output an error correction failsignal indicating failure in correcting the error bits.

The ECC component 138 may perform an error correction operation based ona coded modulation such as a low density parity check (LDPC) code, aBose-Chaudhuri-Hocquenghem (BCH) code, a turbo code, a Reed-Solomon (RS)code, a convolution code, a recursive systematic code (RSC), atrellis-coded modulation (TCM), a Block coded modulation (BCM), and onthe like. The ECC component 138 may include suitable circuits, modules,systems and/or devices for performing the error correction operationbased on at least one of the above described codes.

The PMU 140 may provide and manage an electrical power in the controller130.

The memory interface 142 may serve as an interface for handling commandsand data transferred between the controller 130 and the memory device150, to allow the controller 130 to control the memory device 150 inresponse to a request delivered from the host 102. The memory interface142 may generate a control signal for the memory device 150 and mayprocess data entered into or outputted from the memory device 150 underthe control of the processor 134 in a case when the memory device 150 isa flash memory and, in particular, when the memory device 150 is a NANDflash memory. The memory interface 142 can provide an interface forhandling commands and data between the controller 130 and the memorydevice 150, for example, operations of NAND flash interface, inparticular, operations between the controller 130 and the memory device150. In accordance with an embodiment, the memory interface 142 can beimplemented through a firmware called a Flash Interface Layer (FIL) as acomponent for exchanging data with the memory device 150.

The memory 144 may support operations performed by the memory system 110and the controller 130. The memory 144 may store temporary ortransactional data occurred or delivered for operations in the memorysystem 110 and the controller 130. The controller 130 may control thememory device 150 in response to a request from the host 102. Thecontroller 130 may deliver data read from the memory device 150 into thehost 102. The controller 130 may store data entered through the host 102within the memory device 150. The memory 144 may be used to store datarequired for the controller 130 and the memory device 150 to performoperations such as read operations or program/write operations.

The memory 144 may be implemented with a volatile memory. The memory 144may be implemented with a static random access memory (SRAM), a dynamicrandom access memory (DRAM) or both. Although FIG. 1 shows the memory144 disposed within the controller 130, the invention is not limitedthereto. That is, the memory 144 may be located within or externally tothe controller 130. For instance, the memory 144 may be embodied by anexternal volatile memory having a memory interface transferring dataand/or signals between the memory 144 and the controller 130.

The memory 144 can store data necessary for performing operations suchas data writing and data reading requested by the host 102 and/or datatransfer between the memory device 150 and the controller 130 forbackground operations such as garbage collection or wear levelling asdescribed above. In accordance with an embodiment, for supportingoperations in the memory system 110, the memory 144 may include aprogram memory, a data memory, a write buffer/cache, a readbuffer/cache, a data buffer/cache, a map buffer/cache, and the like.

The processor 134 may be implemented with a microprocessor or a centralprocessing unit (CPU). The memory system 110 may include one or moreprocessors 134, which may control the overall operations of the memorysystem 110. By way of example but not limitation, the processor 134 cancontrol a program operation or a read operation of the memory device150, in response to a write request or a read request entered from thehost 102. In accordance with an embodiment, the processor 134 may use orexecute firmware to control the overall operations of the memory system110. Herein, the firmware may be referred to as a flash translationlayer (FTL). The FTL may perform an operation as an interface betweenthe host 102 and the memory device 150. The host 102 may transmitrequests for write and read operations to the memory device 150 throughthe FTL.

The FTL may manage operations of address mapping, garbage collection,wear-leveling and so forth. Particularly, the FTL may load, generate,update, or store map data. Therefore, the controller 130 may map alogical address, which is entered from the host 102, with a physicaladdress of the memory device 150 through the map data. The memory device150 may function as a general storage device to perform a read or writeoperation because of the address mapping operation. Also, through theaddress mapping operation based on the map data, when the controller 130tries to update data stored in a particular page, the controller 130 mayprogram the updated data on another empty page and may invalidate olddata of the particular page (e.g., update a physical address,corresponding to a logical address of the updated data, from theprevious particular page to the another newly programed page) due to acharacteristic of a flash memory device. Further, the controller 130 maystore map data of the new data into the FTL.

For example, when performing an operation requested from the host 102 inthe memory device 150, the controller 130 uses the processor 134implemented as a microprocessor or a central processing unit (CPU) orthe like. The processor 134 engaged with the memory device 150 canprocess command operation corresponding to an inputted command from thehost 102. The controller 130 can perform a foreground operation as acommand operation, corresponding to an command inputted from the host102, such as a program operation corresponding to a write command, aread operation corresponding to a read command, an erase/discardoperation corresponding to an erase/discard command, and a parameter setoperation corresponding to a set parameter command, a set featurecommand or a set command.

For another example, the controller 130 may perform a backgroundoperation on the memory device 150 through the processor 134. By way ofexample but not limitation, the background operation for the memorydevice 150 includes an operation (e.g., a garbage collection (GC)operation) for copying data stored in one memory block among the memoryblocks 152, 154, 156 . . . in the memory device 150, and storing thecopied data in another memory block. The background operation caninclude an operation (e.g., a wear leveling (WL) operation) to move orswap data between any two or more of the memory blocks 152, 154, 156 . .. in memory device 150. As the background operation, the controller 130uses the processor 134 for storing the map data stored in the controller130 to at least one of the memory blocks 152, 154, 156 . . . in thememory device 150, e.g., a map flush operation. A bad block managementoperation of checking for bad blocks among the plurality of memoryblocks 152, 154, 156 . . . is another example of a background operationperformed by the processor 134.

In the memory system 110, the controller 130 performs a plurality ofcommand operations corresponding to a plurality of commands entered fromthe host 102. For example, when performing a plurality of programoperations corresponding to plural program commands, a plurality of readoperations corresponding to plural read commands and a plurality oferase operations corresponding to plural erase commands sequentially,randomly or alternatively, the controller 130 can determine whichchannel(s) or way(s) among a plurality of channels (or ways) forconnecting the controller 130 to a plurality of memory dies in thememory device 150 is/are proper or appropriate for performing eachoperation. The controller 130 can send or transmit data or instructionsvia determined channels or ways for performing each operation. Theplurality of memory dies in the memory 150 can transmit an operationresult via the same channels or ways, respectively, after each operationis complete. Then, the controller 130 may transmit a response or anacknowledge signal to the host 102. In an embodiment, the controller 130can check a status of each channel or each way. In response to a commandentered from the host 102, the controller 130 may select at least onechannel or way based on the status of each channel or each way so thatinstructions and/or operation results with data may be delivered viaselected channel(s) or way(s).

By way of example but not limitation, the controller 130 can recognizestatuses regarding a plurality of channels (or ways) associated with aplurality of memory dies included in the memory device 150. Thecontroller 130 may determine each channel or each way as one of a busystate, a ready state, an active state, an idle state, a normal stateand/or an abnormal state. Controller's determination of which channel orway an instruction (and/or a data) is delivered through can beassociated with a physical block address, e.g., which die(s) theinstruction (and/or the data) is delivered into. The controller 130 canrefer to descriptors delivered from the memory device 150. Thedescriptors can include a block or page of parameters that describesomething about the memory device 150, which is a data with apredetermined format or structure. For instance, the descriptors mayinclude device descriptors, configuration descriptors, unit descriptors,and the like. The controller 130 can refer to, or use, the descriptorsto determine which channel(s) or way(s) an instruction or a data isexchanged via.

A management unit (not shown) may be included in the processor 134. Themanagement unit may perform bad block management of the memory device150. The management unit may find bad memory blocks included in thememory device 150, which are in unsatisfactory condition for furtheruse, as well as perform bad block management on the bad memory blocks.When the memory device 150 is a flash memory, for example, a NAND flashmemory, a program failure may occur during the write operation, forexample, during the program operation, due to characteristics of a NANDlogic function. During the bad block management, the data of theprogram-failed memory block or the bad memory block may be programmedinto a new memory block. The bad blocks may seriously aggravate theutilization efficiency of the memory device 150 having a 3D stackstructure and the reliability of the memory system 110. Thus, reliablebad block management may enhance or improve performance of the memorysystem 110.

FIG. 2 shows an example of a memory device included in a memory systemin accordance with an embodiment of the invention, FIG. 3 shows anon-volatile memory cell array in memory blocks included in a memorydevice in accordance with an embodiment of the invention, and FIG. 4shows an example of a 3-demensional memory device structure in a memorysystem in accordance with an embodiment of the invention.

Referring to FIG. 2, the memory device 150 can include a plurality ofmemory blocks, such as a first block (BLOCK0) 210, a second block(BLOCK1) 220, a third block (BLOCK2) 230 to a nth block (BLOCKN-1) 240.Each of blocks 210, 220, 230 to 240 can include a plurality of pages,e.g., 2^(M) pages, 2M Pages, or M pages. Here, n and M are naturalnumbers. For convenience of description, each of the memory blocksincludes 2^(M) pages. Each of the pages can include a plurality ofnon-volatile memory cells coupled via a word line (WL) with each other.

The memory device 150 can include a plurality of memory blocks. Each ofthe plurality of memory blocks is one of different types of memoryblocks such as a single level cell (SLC) memory block, a multi-levelcell (MLC) memory block or the like, according to the number of bitsthat can be stored or represented in one memory cell. Here, the SLCmemory block includes a plurality of pages implemented by memory cells,each storing one bit of data. The SLC memory block can have high dataI/O operation performance and high durability. The MLC memory blockincludes a plurality of pages implemented by memory cells, each storingmulti-bit data (e.g., two bits or more). The MLC memory block can havelarger storage capacity than the SLC memory block. The MLC memory blockcan be highly integrated to provide larger storage capacity within thesame amount of space as the SLC memory block. In an embodiment, thememory device 150 may be implemented with MLC memory blocks such as anMLC′ memory block, a triple level cell (TLC) memory block, a quadruplelevel cell (QLC) memory block, and a combination thereof. The MLC′memory block may include a plurality of pages implemented by memorycells, each capable of storing 2-bit data. The triple level cell (TLC)memory block can include a plurality of pages implemented by memorycells, each capable of storing 3-bit data. The quadruple level cell(QLC) memory block can include a plurality of pages implemented bymemory cells, each capable of storing 4-bit data. In another embodiment,the memory device 150 can be implemented with a block including aplurality of pages implemented by memory cells, each capable of storing5-bit or more bit data.

In an embodiment of the disclosure, the memory device 150 is embodied asa nonvolatile memory such as a flash memory, e.g., a NAND flash memory,a NOR flash memory and the like. In other embodiments, the memory device150 may be implemented by at least one of a phase change random accessmemory (PCRAM), a ferroelectrics random access memory (FRAM), a spintransfer torque random access memory (STT-RAM), and a spin transfertorque magnetic random access memory (STT-MRAM), or the like.

Each of the blocks 210, 220, 230 to 240 in the memory device 150 canstore data provided from the host 102 through a program operation andprovide the stored data to the host 102 through a read operation.

Referring to FIG. 3, a memory block 330 which may correspond to any ofthe plurality of memory blocks 152, 154, 156 . . . included in thememory device 150 of the memory system 110 may include a plurality ofcell strings 340 coupled to a plurality of corresponding bit lines BL0to BLm-1. The cell string 340 of each column may include one or moredrain select transistors DST and one or more source select transistorsSST. Between the drain and source select transistors DST, SST, aplurality of memory cells or memory cell transistors MCO to MCn-1 may becoupled in series. In an embodiment, each of the memory cell transistorsMC0 to MCn-1 may be embodied by an MLC capable of storing datainformation of a plurality of bits. Each of the cell strings 340 may beelectrically coupled to a corresponding bit line among the plurality ofbit lines BL0 to BLm-1. For example, as illustrated in FIG. 3, the firstcell string is coupled to the first bit line BL0, and the last cellstring is coupled to the last bit line BLm-1.

Although FIG. 3 illustrates NAND flash memory cells, the invention isnot limited in this way. It is noted that the memory cells may be NORflash memory cells, or hybrid flash memory cells including two or morekinds of memory cells combined therein. Also, it is noted that thememory device 150 may be a flash memory device including a conductivefloating gate as a charge storage layer or a charge trap flash (CTF)memory device including an insulation layer as a charge storage layer.

The memory device 150 may further include a voltage supply 310 whichprovides word line voltages including a program voltage, a read voltage,and a pass voltage to the word lines according to an operation mode. Thevoltage generation operation of the voltage supply 310 may be controlledby a control circuit (not illustrated). Under the control of the controlcircuit, the voltage supply 310 may select one of the memory blocks (orsectors) of the memory cell array, select one of the word lines of theselected memory block, and provide the word line voltages to theselected word line and the unselected word lines as may be needed.

The memory device 150 may include a read/write circuit 320 which iscontrolled by the control circuit. During a verification/normal readoperation, the read/write circuit 320 may operate as a sense amplifierfor reading data from the memory cell array. During a program operation,the read/write circuit 320 may operate as a write driver for driving bitlines according to data to be stored in the memory cell array. During aprogram operation, the read/write circuit 320 may receive from a buffer(not illustrated) data to be stored into the memory cell array, and maysupply a current or a voltage onto bit lines according to the receiveddata. The read/write circuit 320 may include a plurality of page buffers322, 324 to 326 respectively corresponding to columns (or bit lines) orcolumn pairs (or bit line pairs). Each of the page buffers 322, 324 to326 may include a plurality of latches (not illustrated).

In addition, the memory device 150 may be implemented as atwo-dimensional or three-dimensional memory device, and may beimplemented as a non-volatile memory device of a three-dimensional solidstack structure. The memory device 150 may include a plurality of memoryblocks BLKO to BLKN-1. FIG. 4 is a block diagram for showing the memoryblocks 152, 154, 156 . . . of the memory device 150 shown in FIG. 1.Each of the memory blocks 152, 154, 156 . . . can be implemented as athree-dimensional structure. For example, each of the memory blocks 152,154, 156 . . . may be realized by a structure with dimensions extendingin mutually orthogonal directions, e.g., an x-axis direction, a y-axisdirection, and a z-axis direction.

By way of example but not limitation, each memory block 330 included inthe memory device 150 may include a plurality of NAND strings (NSs)extending along a second direction, and/or can be provided with aplurality of NAND strings (NSs) along with a first direction or a thirddirection. Here, each NAND string NS is coupled with I/O controlcircuits via at least one of a bit line BL, at least one string selectline SSL, at least one drain select line DSL, a plurality of word linesWL, at least one dummy word Line DWL, and a common source line CSL. TheNAND string (NS) may include a plurality of transistors for switching onplural lines.

Each of the plurality of memory blocks 152, 154, 156 in the memorydevice 150 can include a plurality of bit lines BL, a plurality ofstring select lines SSL, a plurality of drain select lines DSL, aplurality of word lines WL, a plurality of dummy word lines DWL and aplurality of common source lines CSL. Each memory block 330 includes aplurality of NAND strings (NSs) shown in FIG. 3.

FIGS. 5 and 6 schematically illustrate an example of performing aplurality of command operations corresponding to a plurality of commandsin the memory system in accordance with an embodiment of the disclosure.This is described in different contexts of a data processing operation,a first of which is a case where a plurality of write commands arereceived from the host 102 and program operations corresponding to thewrite commands are performed, a second of which is a case where aplurality of read commands are received from the host 102 and readoperations corresponding to the read commands are performed, a third ofwhich is a case where a plurality of erase commands are received fromthe host 102 and erase operations corresponding to the erase commandsare performed, and a fourth of which is a case where a plurality ofwrite commands and a plurality of read commands are received togetherfrom the host 102 and program operations and read operationscorresponding to the write commands and the read commands are performed.

Moreover, in an embodiment of the disclosure, a case is described inwhich write data corresponding to a plurality of write commands enteredfrom the host 102 are stored in the buffer/cache included in the memory144 of the controller 130, the write data stored in the buffer/cache areprogrammed to and stored in the plurality of memory blocks included inthe memory device 150, map data are updated which correspond to thestored write data in the plurality of memory blocks, and the updated mapdata are stored in the plurality of memory blocks included in the memorydevice 150. In other words, a case is described in which programoperations corresponding to a plurality of write commands entered fromthe host 102 are performed. Furthermore, in still another embodiment ofthe disclosure, a case is described in which a plurality of readcommands are entered from the host 102 for the data stored in the memorydevice 150, data corresponding to the read commands are read from thememory device 150 by checking the map data of the data corresponding tothe read commands, the read data are stored in the buffer/cache includedin the memory 144 of the controller 130, and the data stored in thebuffer/cache are provided to the host 102. In other words, a case whereread operations corresponding to a plurality of read commands enteredfrom the host 102 are performed is described. In addition, in anotherembodiment of the disclosure, a case is described in which a pluralityof erase commands are received from the host 102 for the memory blocksincluded in the memory device 150, memory blocks are checkedcorresponding to the erase commands, the data stored in the checkedmemory blocks are erased, map data are updated which correspond to theerased data, and the updated map data are stored in the plurality ofmemory blocks included in the memory device 150. Namely, a case whereerase operations corresponding to a plurality of erase commands receivedfrom the host 102 are performed is described.

In connection with such description it is described as an example thatthe controller 130 performs command operations in the memory system 110.However, it is noted that, as described above, the processor 134 in thecontroller 130 may perform command operations in the memory system 110,through, for example, an FTL (flash translation layer). Also, thecontroller 130 programs and stores user data and metadata correspondingto write commands entered from the host 102, in arbitrary memory blocksamong the plurality of memory blocks included in the memory device 150,reads user data and metadata corresponding to read commands receivedfrom the host 102, from arbitrary memory blocks among the plurality ofmemory blocks included in the memory device 150, and provides the readdata to the host 102, or erases user data and metadata, corresponding toerase commands entered from the host 102, from arbitrary memory blocksamong the plurality of memory blocks in the memory device 150.

Metadata may include first map data including a logical/physical (L2P:logical to physical) information (logical information) and second mapdata including a physical/logical (P2L: physical to logical) information(physical information), for data stored in memory blocks incorrespondence to a program operation. Also, the metadata may include aninformation on command data corresponding to a command received from thehost 102, an information on a command operation corresponding to thecommand, an information on the memory blocks of the memory device 150for which the command operation is to be performed, and an informationon map data corresponding to the command operation. In other words,metadata may include all remaining information and data excluding userdata corresponding to a command received from the host 102.

That is, in an embodiment of the disclosure, in the case where thecontroller 130 receives a plurality of write commands from the host 102,program operations corresponding to the write commands are performed,and user data corresponding to the write commands are written and storedin empty memory blocks, open memory blocks or free memory blocks forwhich an erase operation has been performed, among the memory blocks ofthe memory device 150. Also, first map data, including an L2P map tableor an L2P map list in which logical information as the mappinginformation between logical addresses and physical addresses for theuser data stored in the memory blocks are recorded, and second map data,including a P2L map table or a P2L map list in which physicalinformation as the mapping information between physical addresses andlogical addresses for the memory blocks stored with the user data arerecorded, are written and stored in empty memory blocks, open memoryblocks or free memory blocks among the memory blocks of the memorydevice 150.

Here, in the case where write commands are entered from the host 102,the controller 130 writes and stores user data corresponding to thewrite commands in memory blocks. The controller 130 stores, in othermemory blocks, metadata including first map data and second map data forthe user data stored in the memory blocks. Particularly, incorrespondence to that the data segments of the user data are stored inthe memory blocks of the memory device 150, the controller 130 generatesand updates the L2P segments of first map data and the P2L segments ofsecond map data as the map segments of map data among the meta segmentsof metadata. The controller 130 stores the map segments in the memoryblocks of the memory device 150. The map segments stored in the memoryblocks of the memory device 150 are loaded in the memory 144 included inthe controller 130 and are then updated.

Further, in the case where a plurality of read commands are receivedfrom the host 102, the controller 130 reads read data corresponding tothe read commands, from the memory device 150, stores the read data inthe buffers/caches included in the memory 144 of the controller 130. Thecontroller 130 provides the data stored in the buffers/caches, to thehost 102, by which read operations corresponding to the plurality ofread commands are performed.

In addition, in the case where a plurality of erase commands arereceived from the host 102, the controller 130 checks memory blocks ofthe memory device 150 corresponding to the erase commands, and then,performs erase operations for the memory blocks.

When command operations corresponding to the plurality of commandsreceived from the host 102 are performed while a background operation isperformed, the controller 130 loads and stores data corresponding to thebackground operation, that is, metadata and user data, in thebuffer/cache included in the memory 144 of the controller 130, and thenstores the data, that is, the metadata and the user data, in the memorydevice 150. By way of example but not limitation, the backgroundoperation may include a garbage collection operation or a read reclaimoperation as a copy operation, a wear leveling operation as a swapoperation or a map flush operation, For instance, for the backgroundoperation, the controller 130 may check metadata and user datacorresponding to the background operation, in the memory blocks of thememory device 150, load and store the metadata and user data stored incertain memory blocks of the memory device 150, in the buffer/cacheincluded in the memory 144 of the controller 130, and then store themetadata and user data, in certain other memory blocks of the memorydevice 150.

In the memory system in accordance with an embodiment of the disclosure,in the case of performing command operations as foreground operationsand a copy operation, a swap operation and a map flush operation asbackground operations, the controller 130 schedules queues correspondingto the foreground operations and the background operations and allocatesthe scheduled queues to the memory 144 included in the controller 130and the memory included in the host 102. In this regard, the controller130 assigns identifiers (IDs) by respective operations for theforeground operations and the background operations to be performed inthe memory device 150, and schedules queues corresponding to theoperations assigned with the identifiers, respectively. In the memorysystem in accordance with an embodiment of the disclosure, identifiersare assigned not only by respective operations for the memory device 150but also by functions for the memory device 150, and queuescorresponding to the functions assigned with respective identifiers arescheduled.

In the memory system in accordance with an embodiment of the disclosure,the controller 130 manages the queues scheduled by the identifiers ofrespective functions and operations to be performed in the memory device150. The controller 130 manages the queues scheduled by the identifiersof a foreground operation and a background operation to be performed inthe memory device 150. In the memory system in accordance with anembodiment of the disclosure, after memory regions corresponding to thequeues scheduled by identifiers are allocated to the memory 144 includedin the controller 130 and the memory included in the host 102, thecontroller 130 manages addresses for the allocated memory regions. Thecontroller 130 performs not only the foreground operation and thebackground operation but also respective functions and operations in thememory device 150, by using the scheduled queues.

Referring to FIG. 5, the controller 130 performs command operationscorresponding to a plurality of commands entered from the host 102, forexample, program operations corresponding to a plurality of writecommands entered from the host 102. The controller 130 programs andstores user data corresponding to the write commands, in memory blocksof the memory device 150. Also, in correspondence to the programoperations with respect to the memory blocks, the controller 130generates and updates metadata for the user data and stores the metadatain the memory blocks of the memory device 150.

The controller 130 generates and updates first map data and second mapdata which include information indicating that the user data are storedin pages included in the memory blocks of the memory device 150. Thatis, the controller 130 generates and updates L2P segments as the logicalsegments of the first map data and P2L segments as the physical segmentsof the second map data, and then stores them in pages included in thememory blocks of the memory device 150.

For example, the controller 130 caches and buffers the user datacorresponding to the write commands entered from the host 102, in afirst buffer 510 included in the memory 144 of the controller 130.Particularly, after storing data segments 512 of the user data in thefirst buffer 510 worked as a data buffer/cache, the controller 130stores the data segments 512 stored in the first buffer 510 in pagesincluded in the memory blocks of the memory device 150. As the datasegments 512 of the user data corresponding to the write commandsreceived from the host 102 are programmed to and stored in the pagesincluded in the memory blocks of the memory device 150, the controller130 generates and updates the first map data and the second map data.The controller 130 stores them in a second buffer 520 included in thememory 144 of the controller 130. Particularly, the controller 130stores L2P segments 522 of the first map data and P2L segments 524 ofthe second map data for the user data, in the second buffer 520 as a mapbuffer/cache. As described above, the L2P segments 522 of the first mapdata and the P2L segments 524 of the second map data may be stored inthe second buffer 520 of the memory 144 in the controller 130. A maplist for the L2P segments 522 of the first map data and another map listfor the P2L segments 524 of the second map data may be stored in thesecond buffer 520. The controller 130 stores the L2P segments 522 of thefirst map data and the P2L segments 524 of the second map data, whichare stored in the second buffer 520, in pages included in the memoryblocks of the memory device 150.

Also, the controller 130 performs command operations corresponding to aplurality of commands received from the host 102, for example, readoperations corresponding to a plurality of read commands received fromthe host 102. Particularly, the controller 130 loads L2P segments 522 offirst map data and P2L segments 524 of second map data as the mapsegments of user data corresponding to the read commands, in the secondbuffer 520, and checks the L2P segments 522 and the P2L segments 524.Then, the controller 130 reads the user data stored in pages ofcorresponding memory blocks among the memory blocks of the memory device150, stores data segments 512 of the read user data in the first buffer510, and then provides the data segments 512 to the host 102.

Furthermore, the controller 130 performs command operationscorresponding to a plurality of commands entered from the host 102, forexample, erase operations corresponding to a plurality of erase commandsentered from the host 102. In particular, the controller 130 checksmemory blocks corresponding to the erase commands among the memoryblocks of the memory device 150 to carry out the erase operations forthe checked memory blocks.

In the case of performing an operation of copying data or swapping dataamong the memory blocks included in the memory device 150, for example,a garbage collection operation, a read reclaim operation or a wearleveling operation, as a background operation, the controller 130 storesdata segments 512 of corresponding user data, in the first buffer 510,loads map segments 522, 524 of map data corresponding to the user data,in the second buffer 520, and then performs the garbage collectionoperation, the read reclaim operation or the wear leveling operation. Inthe case of performing a map update operation and a map flush operationfor metadata, e.g., map data, for the memory blocks of the memory device150 as a background operation, the controller 130 loads thecorresponding map segments 522, 524 in the second buffer 520, and thenperforms the map update operation and the map flush operation.

As aforementioned, in the case of performing functions and operationsincluding a foreground operation and a background operation for thememory device 150, the controller 130 assigns identifiers by thefunctions and operations to be performed for the memory device 150. Thecontroller 130 schedules queues respectively corresponding to thefunctions and operations assigned with the identifiers, respectively.The controller 130 allocates memory regions corresponding to therespective queues, to the memory 144 included in the controller 130 andthe memory included in the host 102. The controller 130 manages theidentifiers assigned to the respective functions and operations, thequeues scheduled for the respective identifiers and the memory regionsallocated to the memory 144 of the controller 130 and the memory of thehost 102 in correspondence to the queues, respectively. The controller130 performs the functions and operations for the memory device 150,through the memory regions allocated to the memory 144 of the controller130 and the memory of the host 102.

Referring to FIG. 6, the memory device 150 includes a plurality ofmemory dies, for example, a memory die 0, a memory die 1, a memory die 2and a memory die 3, and each of the memory dies includes a plurality ofplanes, for example, a plane 0, a plane 1, a plane 2 and a plane 3. Therespective planes in the memory dies included in the memory device 150include a plurality of memory blocks, for example, N number of blocksBlock0, Block1, . . . , BlockN-1 each including a plurality of pages,for example, 2^(M) number of pages, as described above with reference toFIG. 3. Moreover, the memory device 150 includes a plurality of bufferscorresponding to the respective memory dies, for example, a buffer 0corresponding to the memory die 0, a buffer 1 corresponding to thememory die 1, a buffer 2 corresponding to the memory die 2 and a buffer3 corresponding to the memory die 3.

In the case of performing command operations corresponding to aplurality of commands received from the host 102, data corresponding tothe command operations are stored in the buffers included in the memorydevice 150. For example, in the case of performing program operations,data corresponding to the program operations are stored in the buffers,and are then stored in the pages included in the memory blocks of thememory dies. In the case of performing read operations, datacorresponding to the read operations are read from the pages included inthe memory blocks of the memory dies, are stored in the buffers, and arethen provided to the host 102 through the controller 130.

In an embodiment of the disclosure, while it will be described below asan example that the buffers in the memory device 150 exist outside therespective corresponding memory dies, it is to be noted that the buffersmay exist inside the respective corresponding memory dies, and it is tobe noted that the buffers may correspond to the respective planes or therespective memory blocks in the respective memory dies. Further, whileit will be described below as an example that the buffers in the memorydevice 150 are the plurality of page buffers 322, 324 to 326 asdescribed above with reference to FIG. 3, it is to be noted that thebuffers may be a plurality of caches or a plurality of registersincluded in the memory device 150.

Also, the plurality of memory blocks included in the memory device 150may be grouped into a plurality of super memory blocks, and commandoperations may be performed in the plurality of super memory blocks.Each of the super memory blocks may include a plurality of memoryblocks, for example, memory blocks included in a first memory blockgroup and a second memory block group. In this regard, in the case wherethe first memory block group is included in the first plane of a certainfirst memory die, the second memory block group may be included in thefirst plane of the first memory die, be included in the second plane ofthe first memory die or be included in the planes of a second memorydie.

In an embodiment of the disclosure, a data processing system may includeplural memory systems. Each of the plural memory systems 110 can includethe controller 130 and the memory device 150. In the data processingsystem, one of the plural memory systems 110 can be a master and theothers can be a slave. The master may be determined based on contentionbetween the plural memory systems 110. When a plurality of commands isdelivered from the host 102 in the data processing system, the mastercan determine a destination of each command based at least on statusesof channels or buses. For example, a first memory system can bedetermined as a master memory system among a plurality of memorysystems, corresponding to information delivered from the plurality ofmemory systems. If the first memory system is determined as the mastermemory system, the remaining memory systems are considered slave memorysystems. A controller of the master memory system can check statuses ofa plurality of channels (or ways, buses) coupled to a plurality ofmemory systems, to select which memory system handles commands or datadelivered from the host 102. In an embodiment, a master can bedynamically determined among the plural memory systems. In anotherembodiment, a master memory system may be changed with one of otherslave memory systems periodically or according to an event.

A method and apparatus for transferring data in the memory system 110including the memory device 150 and the controller 130 is describedbelow in more detail. As the amount of data stored in the memory system110 becomes larger, the memory system 110 may be required to read orstore large amounts of data at a time. However, a read time for readinga data stored in the memory device 150 or a program/write time forwriting a data in the memory device 150 may be generally longer than aprocessing time for the controller 130 to process a data or a datatransmission time for data transfer between the controller 130 and thememory system 150. For example, the read time might be twice theprocessing time. Since the read time or the program time is relativelyfar longer than the processing time or the data transmission time, aprocedure or a process for delivering data in the memory system 110 mayaffect performance of the memory system 110, e.g., an operation speed,and/or structure of the memory system 110 such as a buffer size.

In FIG. 7, a memory system 20 is described. The memory system 20 is anexample of a memory system in accordance with another embodiment of thedisclosure. By way of example but not limitation, the memory system 20can be embedded within a computing device or a mobile device. The memorysystem 20 can be engaged with a host 10 for transmitting or receivingdata.

Referring to FIG. 7, the memory system 20 can include a controller 30and a memory device 40. The controller 30 outputs data from the memorydevice 40, which is requested by the host 10. Or, the controller 30stores data delivered from the host 10 to the memory device 40. Thememory device 40 can include plural memory cells storing data. Aninternal structure of the memory device 40 may be designed or configuredaccording to characteristics of the memory device 40, purposes for whichthe memory system 20 is used, and/or specifications of the memory system20, which are required by the host 10. For example, the memory device 40and the memory device 150 illustrated in FIGSs. 2 to 6 may havesubstantially the same structure.

The controller 30 and the memory device 40 can exchange data with eachother through ‘n’ number of channels, where ‘n’ is an integer largerthan one. However, in order for the controller 30 to read or write datato the memory device 40, additional control variables or control signalsmay be required depending on the internal structure of the memory device40.

The controller 30 may include at least one processor 34, a hostinterface 36, a buffer 38, and a memory interface 32. The processor 34is for command operations within the controller 30 and may perform arole like that of a CPU used in a computing device. The host interface36 is for data communication between the memory system 20 and the host10, while the memory interface 32 is for data communication between thememory device 40 and the controller 30. The buffer 38 can temporarilystore required data and operation status during the operation of theprocessor 34, the host interface 36 and the memory interface 32, and/orI/O data delivered between the memory device 40 and the host 10. Theelements of the controller 30 described above may be functional onesaccording to an operation, a task, or the like that is processed by thecontroller.

In a physical view, the controller 30 may include at least oneprocessor, at least one memory, at least one input/output port, a wirefor electrical connection between the components and the like.

As the number of memory cells capable of storing data in the memorydevice 40 increases, the internal structure of the memory device 40 canbe complicated as described in FIG. 6. The controller 30 may transmit orreceive the data along with access information according to the internalconfiguration of the memory device 40. Here, the access information mayinclude information regarding the ‘n’ number of channels, the ‘k’ numberof ways, ‘p’ bits of multi-level data stored in each memory cell, the‘b’ number of planes included in a predetermined logical storage unit,and the like. That is, when the controller 30 programs data to thememory device 40 or reads data from the memory device 40, the controller30 can use the information regarding the ‘n’ number of channels, the ‘k’number of ways, the ‘p’ bits of multi-level data stored in each memorycell and/or the ‘b’ number of planes. The information can be used toindicate or determine locations where data is stored into, e.g., pluralmemory cells each specified by at least one of the ‘n’ number ofchannels, at least one of the ‘k’ number of ways, at least one of the‘p’ bits of multi-level data and/or at least one of the ‘b’ number ofplanes in the predetermined logical storage unit.

In FIG. 8, an example of a memory device in accordance with anotherembodiment of the disclosure is described.

Referring to FIG. 8, the memory device 40 engaged with the controller 30may include a plurality of logical storage units 42_1, 42_2, . . . ,42_q (42_1 to 42_q) and a plurality of buffers 44_1 to 44_q. Here, eachof the logical storage units 42_1, 42_2, . . . , 42_q (42_1 to 42_q) canbe associated with at least one plane. The logical storage unit maycorrespond to a group of memory cells which are arranged or accessed fordata during operations of writing or reading the data to or from thememory device 40.

The memory device 40 can include a plurality of memory dies, eachincluding a plurality of planes, each including a plurality of memoryblocks, such as the memory device 150 described in FIGS. 1 to 4. Thelogical storage unit described in FIG. 8 can be considered anoperational unit for reading and writing data to and from the memorydevice 40. In an embodiment, the logical storage unit is associated withat least one plane when the memory device 40 includes a plurality ofplanes. For example, the logical storage unit can lie over pluralplanes, and some of each plane can be included in the logical storageunit. In another embodiment, the logical storage unit in the memorydevice 40 may be determined on a basis of die-by-die, block-by-block,page-by-page, or the like. Further, the logical storage unit may bedetermined differently depending on the controller 30 or a size ofbuffer included in the memory system 20 (see FIG. 7), the number ofchannels, a power management apparatus, and the like.

Although not shown, a plurality of planes included in one logicalstorage unit 42_1 to 42_q may be part of a die, each of which can beseparated by a channel and a way. For example, it is assumed that thereare ten die in the memory device 40. Five planes of each die can begrouped together and arranged as a single logical storage unit. Thenumber of dies included in memory device 40 and the number of planesincluded in each die may vary in accordance with an embodiment. Thus,there may be a variety of ways to select some of the plural diesincluded in the memory device 40 and select some of the plural planesincluded in the selected die for establishing a logical storage unit. Inparticular, the logical storage unit may be used as a basic unit forread and write operations in the memory system 20. When memory cellsincluded in the memory system 20 may have a predetermined lifetime forread and write operations, the logical storage unit may be changed oradjusted periodically or conditionally (e.g., according to predeterminedconditions) in order to increase the overall lifetime of the memorycells.

Each of the logical storage units 42_1 to 42_q can be engaged with eachof the buffers 44_1 to 44_q. At least one buffer may be allocated foreach logical storage unit in the memory device 40. The time (e.g., aread time, a program time, etc.) required to read data from or writedata to the memory cells in each of the logical storage units 42_1 to42_q may be longer than a data transmission time between the controller30 and the memory device 40. Since a data transfer speed via a channel,which is considered a path through which the data moves between thememory device 40 and the controller 30, is faster than a read speed anda program speed of the memory device 40, a buffer can be arranged foreach logical storage unit which enhances efficiency of data transmissionvia the channel.

In another embodiment, a plurality of buffers 44_1 to 44_q included inthe memory device 40 do not correspond one-to-one to the plural logicalstorage units. But, the plurality of buffers 44_1 to 44_q can beprovided to correspond to the number of dies or planes. The number andthe size of the buffers may be changed depending on how the readoperation or the program (write) operation is performed in the memorydevice 40.

In accordance with an embodiment, data transmission between thecontroller 30 and the memory device 40 may be achieved by a serial datacommunication method. For example, the controller 30 can be a master,and various modules in the memory device 40 can play a role as slaves.The format of the data transmitted through the channel may be packetizedand may include a start area, a data area, an error check area, an endarea, and the like.

In accordance with an embodiment, information about which logicalstorage unit data may be stored in the memory device 40 or which logicalstorage unit the data may be read or accessed from may be transmitted asa separate signal from the data or as a combined signal with the data.Further, a single logical storage unit may include a plurality ofplanes, and the plurality of planes may be coupled with the controller30 through a plurality of channels or a plurality of ways. In addition,a memory cell included in the plurality of planes may be a multi-levelcell (MLC) capable of storing data of 2 bit or more bits per cell.

For example, in order to accurately determine in which position of thememory device 40 data transferred from the controller 30 is to be storedduring a program or write operation, the controller 30 can sendinformation regarding one of the ‘n’ number of channels, one of the ‘k’number of ways, one of ‘p’ bits in a multi-level data stored in thememory cell, and one of the ‘b’ number of planes included in thepredetermined logical storage unit. In addition, in order to accuratelyread data from the memory device 40, the controller 30 can sendinformation regarding one of the ‘n’ number of channels, one of the ‘k’number of ways, one of ‘p’ bits in a multi-level data stored in thememory cell, and one of the ‘b’ number of planes. The memory device 40can output the data based on the information.

In accordance with an embodiment, when a manner or a way of how thememory device 40 and the controller 30 transmit data to each other isdetermined, information indicating which one logical storage unit thedata is stored in may be sufficient to perform a read operation or aprogram operation. Information regarding a specific channel, a specificway, a specific plane or a specific bit of memory cell might not benecessary. However, in this case, since the logical storage unit doesnot represent a physical storage location, the access information usedunder a physical transmission layer should include predeterminedinformation which relates to the specific location where data isactually accessed and stored.

In FIGS. 9A and 9B, mapping circuitries 62A, 62B in accordance withvarious embodiments of the disclosure are described. Herein, the mappingcircuitries 62A, 62B may determine which location or position of thememory device 40 the data delivered from the controller 30 can be storedin.

Referring to FIGS. 9A and 9B, the mapping circuitry 62A may be includedin the memory interface 32 included in the controller 30, or the mappingcircuitry 62B may be included in the host interface 36, in accordancewith embodiments. The positions of the mapping circuitries 62A, 62B maybe changed in accordance with an embodiment. The mapping circuitries62A, 62B may operate in conjunction with the controller 30. The mappingcircuitries 62A, 62B can determine where data is delivered in the memorydevice 40, based on at least one of a first order of the plurality ofchannels, a second order of the plurality of planes, a third order ofthe plurality of ways, and a fourth order of the plurality of bits ofmulti-level data stored in the memory cell.

In accordance with an embodiment, the internal structure orconfiguration of the controller 30 may be constituted with at least onecircuitry corresponding to each element. As used in this application,the term ‘circuitry’ refers to all of the following: (a) hardware-onlycircuit implementations (such as implementations in only analog and/ordigital circuitry) and (b) combinations of circuits and software (and/orfirmware), such as (as applicable): (i) a combination of processor(s) or(ii) portions of processor(s)/software (including digital signalprocessor(s)), software, and memory(ies) that work together to cause anapparatus, such as a mobile phone or server, to perform variousfunctions) and (c) circuits, such as a microprocessor(s) or a portion ofa microprocessor(s), that require software or firmware for operation,even if the software or firmware is not physically present. Thisdefinition of ‘circuitry’ applies to all uses of this term in thisapplication, including in any claims. As a further example, as used inthis application, the term “circuitry” would also cover animplementation of merely a processor (or multiple processors) or portionof a processor and its (or their) accompanying software and/or firmware.The term “circuitry” would also cover, for example and if applicable tothe particular claim element, an integrated circuit or an applicationsprocessor integrated circuit for a controller, a computing device, agaming device, a mobile phone, a display, or a network or communicationdevice. In accordance with another embodiment, the internal structure orconfiguration of the controller 30 may include elements based onfunctional classification according to an operation, a task, and thelike which is processed by the controller 30.

The mapping circuitries 62A, 62B shown in FIGS. 9A and 9B can determinea transmission order indicating in which a large amount of data can bestored by various methods. FIGS. 10 to 14 illustrate how the mappingcircuitries 62A and 62B transfer data to the memory device 40. In FIGS.10 to 14, it is assumed that a single logical storage unit includes fourplanes P0, P1, P2, P3. The four planes P0, P1, P2, P3 are grouped fromeach of eight dies coupled via four channels 0 to 3 and two ways (Ways 0to 1). FIGS. 10 to 14 shows examples of the memory device 40 includingmemory cells each capable of storing 3 bits of data per cell (e.g., atriple level cell (TLC)).

In FIGS. 10 to 14, first to fifth methods for data transmission from acontroller to a memory device in accordance with embodiments aredescribed. In a data transmission method described with reference toFIGS. 10 to 14, the triple level cell (TLC) include first to third bitsof data, e.g., a most-significant bit, a center-significant bit and aleast-significant bit (MSB, CSB, LSB). The data may be stored in theorder of the third bit, the second bit, and the first bit. In accordancewith an embodiment, it is also possible to store data in the order ofthe first bit, the second bit and the third bit in each memory cell.

FIG. 10 illustrates a first method of transferring data from thecontroller 30 to the memory device 40.

Referring to FIG. 10, the first method can transmit data to a first dieDie 0 coupled via a first channel Channel 0 and a first way Way 0 first.After the data is filled into an available area in the plurality ofplanes P0, P1, P2, P3 included in the first die Die 0, the followingdata can be filled into an available area in the second die Die 1. Afterthe data is assigned to plural dies Dies 0 to 3 coupled via the channelsChannels 0 to 3 and the first way Way 0, the following data is assignedto the other dies Dies 4 to 7 coupled via the channels Channels 0 to 3and a second way Way 1.

In each of the dies Die 0 to 7, data are assigned based on the order ofthe planes (P0→P1→P2→P3) and the order of bits (the third bit (LSB, L),the second bit (CSB, C), the first bit (MSB, M), i.e., L→C→M). First, inthe first die Die 0, data is transferred in the order of the planes(P0→P1→P2→P3) corresponding to the third bit (L) of each memory cell(referring to the symbol ‘{circle around (2)}’). Thereafter, thefollowing data may be transmitted in the order of the planes(P0→P1→P2→P3) corresponding to the second bit (C) of each memory cell(referring to the symbol ‘{circle around (2)}’). Then, the followingdata may be transmitted in the order of the planes (P0→P1→P2→P3)corresponding to the first bit (M) of each memory cell (referring to thesymbol ‘{circle around (3)}’).

When data is transferred to all available space of the first die Die 0,the channel can be changed from the first channel Channel 0 to thesecond channel Channel 1 to transfer the following data into the seconddie Die 1. In the second die Die 1, in accordance with the order of theplanes (P0→P1→P2→P3) and the order of bits (L→C→M), the following datacan be transmitted (referring to the symbols ‘{circle around (4)},’‘{circle around (5)},’ ‘{circle around (6)}’).

When the data is assigned into all available spaces of the second dieDie 1, the channel can be changed from the second channel Channel 1 to athird channel Channel 2 to transfer the following data into the thirddie Die 2. Like the first and second dies Dies 0 and 1, the followingdata can be transmitted based on the order of the planes (P0→P1→P2→P3)and the order of bits (L→C→M), referring to the symbols ‘{circle around(7)},’ ‘{circle around (3)},’ ‘{circle around (9)}’ in FIG. 10.

After data is transferred to all available spaces of the fourth die Die3 in the same manner, the way can be changed from the first way Way 0 tothe second way Way 1. Then, the following data is transmitted into thefifth die Die 4 coupled with the controller 30 via the first channelChannel 0 and the second way Way 1.

The first method described above is advantageous in that a size of thebuffer 38 included in the controller 30 does not need to be large.Although there is a plurality of channels between the controller 30 andthe memory device 40, the first method can transmit data having apredetermined size through a single channel, and then transmit the samesize data via the next channel. Thus, the buffer 38 may have a smallsize corresponding to the maximum size of data transmitted over a singlechannel once. Also, in the first method, even if data has a size thatcannot be transferred to all the dies Die 0 to 7, a dummy data might benot large because the write operation can be performed when the dummydata is transmitted only into the last die in which the data is notfilled completely. This is another advantage, that the amount of dummydata is small.

However, since only a single channel among the plurality of channels isused, at least one channel other than the channel being used becomes inan idle state so that it may be inefficient in views of datatransmission via the plurality of channels. Inefficiency in datatransmission might result in a lower data input/output throughput of thememory system when voluminous data (a large amount of data) are read orprogrammed.

FIG. 11 illustrates a second method of transferring data from thecontroller 30 to the memory device 40.

Referring to FIG. 11, a second method is to transmit data of a singlebit (LSB, L) to the plurality of planes P0, P1, P2, P3 included in thefirst die Die 0 coupled to the controller 30 via the first channelChannel 0 and the first way Way 0. After transmitting data assigned atthe third bit (L) of memory cells in the plurality of planes P0, P1, P2,P3 included in the first die Die 0, the controller 30 can transmit thefollowing data into the second die Die 1 connected to the next channelChannel 1. After transmitting data assigned at one bit of data into thedies (Dies 0-3) coupled via all channels (Channels 0-3) and the firstway Way 0, the following data is transmitted into the other dies Dies 4to 7 coupled via the second way Way 1. After data assigned as a singlebit in all of memory cells in the logical storage unit are transmitted,the following data can be filled in the next bit (CSB, C) on a pluralityof planes included in the first die Die 0 connected through the firstchannel Channel 0 and the first way Way 0.

In each die Die 0 to 7, one bit of data is transferred to each unit cellaccording to the order of the planes (P0→P1→P2→P3). First, when datacorresponding to the third bit (LSB, L) is transferred to the pluralityof planes P0, P1, P2, P3 included in each die according to the order ofthe dies Die 0 to 7 referring to the symbols ({circle around(1)}→{circle around (2)}→{circle around (3)}→{circle around (4)}→{circlearound (5)}→{circle around (6)}→{circle around (7)}→{circle around(i)}), the following data assigned for the second bit (CSB, C) can startto be transmitted referring to the symbol C). Thereafter, when dataassigned for the second bit C are transmitted to all the dies Die 0 to7, data corresponding to the third bit (MSB, M) can be transmitted. Theorder of the dies Die 0 to 7 can be determined based at least on theorder of the channels (Channel 0→Channel 1→Channel 2→Channel 3) and theorder of ways (Way 0→Way 1).

The second method described above can increase a size of the buffer 38included in the controller 30 in proportion to the number of channels(e.g., four). Herein, the buffer 38 might have a data structure of aqueue. Since data can be transmitted to all dies based on the order ofthe channels and the order of ways once, there is an advantageous effectof using a plurality of channels as compared with the first methoddescribed above in which data is transmitted for each die once by usingthe order of the channels and the order of the ways so that the secondmethod can be faster than the first method for data transmission ofvoluminous data. However, since the channel transmits one bit of data tothe plane included in a specific die, and then moves to the next channelto transmit the following data, no inter-channel overlap can occur. Thatis, since data is transmitted through a plurality of channels ascompared with the first method, it is possible to reduce the timerequired for transferring the voluminous data from the controller 30 tothe memory device 40. However, it might not be an optimal manner becausethe second method use the plurality of channels sequentially, not inparallel.

FIG. 12 illustrates a third method of transferring data from thecontroller 30 to the memory device 40.

Referring to FIG. 12, the third method can be distinguishable from thesecond method described in FIG. 11. In the second method, after datacorresponding to a single bit are transmitted to all dies Die 0 to 7,the following data corresponding to the next bit are transmitted.However, in the third method, the data are transmitted into some dies(for example, Dies 0 to 3) of all dies Die 0 to 7 using a plurality ofchannels without changing the way. After the data are filled within somedies, the following data can be transmitted into the remaining die(e.g., Dies 4 to 7) by changing the way.

Specifically, in each of the dies Die 0 to 7, data can be storedaccording to the order of the planes (P0→P1→P2→P3) and the order of bits(L→C→M, i.e., the order of the third bit LSB (L), the second bit CSB(C), and the first bit MSB (M)). The data is transmitted through thefirst channel Channel 0 in the order of planes (P0→P1→P2→P3) and storedas the third bit L of memory cells included in the first die Die 0,referring to the symbol ({circle around (1)}). Then, referring to thesymbol ({circle around (2)}), the following data can be transmittedthrough the second channel Channel 1 in the order of planes(P0→P1→P2→P3) and stored as the third bit L of memory cells included inthe second die Die 1. Then, data may be transmitted into the third dieDie 2. Referring to the symbol ({circle around (3)}), data assigned toavailable spaces corresponding to the third bit (L) in the order ofplanes (P0→P1→P2→P3) may be delivered via the third channel Channel 2.The following data can be delivered via the fourth channel Channel 3into the fourth die Die 3, which are assigned to available spacescorresponding to the third bit (L) in the order of planes (P0→P1→P2→P3),referring to the symbol ({circle around (4)}).

In the second method shown in FIG. 11, the following data may bedelivered into the fifth die Die 4 by changing the order of ways.However, in the third method, without changing the way, the followingdata may be delivered into the first die Die 0 via the first channelChannel 0, which are assigned for the second bit (C) in the order ofplanes (P0→P1→P2→P3). After data are assigned for all available spacesof the first to third bits in some dies Dies 0 to 3, the following datacan be transmitted into other dies Dies 4 to 7 by changing the first wayWay 0 with the second way Way 1.

The third method described above can increase a size of the buffer 38 inthe controller 30 in proportion to the number of channels (for example,four), like the second method. The data are transmitted to each diebased on the order of the channels. As compared with the first method inwhich data is transmitted in a die-by-die basis, data can be transmittedby using all channels into plural dies. The data may be transmitted viaa plurality of channels, not a single channel, so that data transmissionmay be faster. However, since data after completely delivered via achannel is delivered via the next channel, there is no overlap for datatransmission between channels. Further, while data are transmitted intoall dies Die 0 to 7 in the second method, data can be transmitted intosome dies Dies 0 to 3 and then into the other dies Dies 4 to 7 aftercompletely assigned for the dies Dies 0 to 3. When data are notcompletely assigned for all bits of all planes in all dies, it isadvantageous that the third method may have lesser amounts of dummy datathan the second method.

FIG. 13 illustrates a fourth method for transferring data from thecontroller 30 to the memory device 40.

Referring to FIG. 13, unlike the first to third methods, the fourthmethod provides that, after a single data is transmitted into a plane ofa specific die, the following data may be transmitted into a plane ofthe next die. In the fourth method, the data are not assigned for allplanes of each dies. In the fourth method, data can be transmitted viaplural channels without changing a way so that, after the data arecompletely assigned for available spaces in some dies (e.g., Dies 0 to3) of all dies Die 0 to 7, the following data can be transmitted intothe other dies (e.g., Dies 4 to 7).

In each die Die 0 to 7, data can be assigned and stored according to theorder of the planes (P0→P1→P2→P3) and the order of bits (the third bit(LSB, L), the second bit (CSB, C), the first bit (MSB, M), i.e., L→C→M).

In details, after data is transferred to the first plane P0 of the firstdie Die 0 connected to the first channel Channel 0, the channel may bechanged with the next one Channel 1 according to the order of thechannels to transmit the following data into the first plane (P0) of thesecond die Die 1, referring to the symbol ({circle around (1)}). Unlikethe first to third methods above described, the channel can be changedbefore all the data is transmitted to the first to fourth planes P0 toP3 included in the first die Die 0. After the data is transferred to thefirst plane P0 in the second die Die 1 connected to the second channelChannel 1, the following data is transferred into the first plane P0 ofthe third die Die 2 via the next channel Channel 2 in accordance withthe order of the channels, referring to the symbol ({circle around(2)}). After the data is delivered into the first plane P0 in the thirddie Die 2 connected to the third channel Channel 2, the following datais transferred into the first plane P0 of the fourth die Die 3 via thenext channel Channel 3 in accordance with the order of the channels,referring to the symbol ({circle around (3)}).

After the data is transferred to the first plane P0 in the fourth Die 3connected to the fourth channel Channel 3, the following data can betransmitted into the second plane (P1) of the first die Die 0 connectedvia the first channel Channel 0, referring to the symbol ({circle around(4)}). When data are transferred to the second plane P1 in the fourthdie Die 3 according to the channel order, the following data can betransferred to the third plane P2 of the first die Die 0.

In all of the planes included in the first to fourth dies Dies 0 to 3,data can be assigned and stored according to the order of bits (thethird bit (LSB, L), the second bit (CSB, C), the first bit (MSB, M),i.e., L→C→M). When data corresponding to the third bit L is transmittedto all of the planes included in the first to fourth dies Die 0 to 3,the following data corresponding to the second bit C can be transmitted.When data corresponding to the second bit C and the third bit M are alltransmitted to the first to fourth dies Die 0 to 3, the way is changedfrom the first way Way 0 to the second way Way 1 to transfer data to theother dies Dies 4 to 7.

In summary, the sequence of access to the memory cells according to thefourth method is shown in Table 1 as follows.

TABLE 1 Access Sequence Channel # Plane # Level Way # 0 0 0 L 0 1 1 0 L0 2 2 0 L 0 3 3 0 L 0 4 0 1 L 0 . . . . . . . . . . . . . . . 15  3 3 L0 16  0 0 C 0 . . . . . . . . . . . . . . . 47  3 3 M 0 48  0 0 L 1 . .. . . . . . . . . . . . .

As shown in Table 1, the ways to be accessed may be changed at eachcompletion of turns of the levels of memory cells, which to be accessedmay be changed at each completion of turns of the planes, which to beaccessed may be changed at each completion of turns of the channels.That is, the controller 30 may access the memory cells according to anaccess hierarchy of the channels, the planes, levels of the cells andthe ways. Multi-level memory cells may configure logical multi-levelpages. For example, triple level memory cells may configure logicaltriple level pages of an LSB page, a CSB page and an MSB page. Thelevels of memory cells may be regarded as the logical multi-level pagesof those memory cells. The ways to be accessed may be changed at eachcompletion of turns of the logical multi-level pages of memory cells.That is, the controller 30 may access the memory cells according to anaccess hierarchy of the channels, the planes, the logical multi-levelpages and the ways.

In the fourth method described above, a size of the buffer 38 of thecontroller 30 can be increased in proportion to the number of channels(for example, four), like the second method. Each data can betransmitted to each die according to the order of the channels so thatthe fourth method has a greater effect of using a plurality of channelsas compared with the first method described above in which the data aretransferred to each die until completely assigned for each die. Also, ascompared with the second method and the third method, since the fourthmethod provides that plural data can be transmitted via differentchannels before data is transmitted to all the planes included in asingle die, data transmission between the plurality of channels mayoverlap so that a speed and efficiency for data transmission increase.

FIG. 14 illustrates a fifth method of transferring data from thecontroller 30 to the memory device 40.

Referring to FIG. 14, like the fourth method described above, the fifthmethod provides that, after a data is transmitted into a single plane ofa specific die, the following data can be transmitted into a plane ofanother die via a next channel. In the fourth method, data aretransmitted via plural channels without changing a way into some dies(e.g., Dies 0 to 3) among all Dies Die 0 to 7, and then the followingdata can be transmitted into other dies (e.g., Dies 4 to 7) after thedata are assigned for all bits of the dies (e.g., Dies 0 to 3). Unlikethe fourth method, the fifth method provides that data is transmittedinto a specific bit of some dies (e.g., Dies 0 to 3), and then thefollowing data can be transmitted into the same bit of other dies (e.g.,Dies 4 to 7) by changing a way.

Specifically, in each of the dies Die 0 to 7, data can be assigned andstored according to the order of the planes (P0→P1→P2→P3) and the orderof bits (the third bit (LSB, L), the second bit (CSB, C), the first bit(MSB, M), i.e., L→C→M).

After data is transferred to the first plane P0 of the first die Die 0connected to the first channel Channel 0, the channel may be changedwith the next one Channel 1 according to the order of the channels totransmit the following data into the first plane (P0) of the second dieDie 1, referring to the symbol ({circle around (1)}). Unlike the firstto third methods above described, the channel can be changed before allof the data is transmitted to the first to fourth planes P0 to P3included in the first die Die 0. After the data is transferred to thefirst plane P0 in the second die Die 1 connected to the second channelChannel 1, the following data is transferred into the first plane P0 ofthe third die Die 2 via the next channel Channel 2 in accordance withthe order of the channels, referring to the symbol ({circle around(2)}). After the data is delivered into the first plane P0 in the thirddie Die 2 connected to the third channel Channel 2, the following datais transferred into the first plane P0 of the fourth die Die 3 via thenext channel Channel 3 in accordance with the order of the channels,referring to the symbol ({circle around (3)}).

After the data is transferred to the first plane P0 in the fourth Die 3connected to the fourth channel Channel 3, the following data can betransmitted into the second plane (P1) of the first die Die 0 connectedvia the first channel Channel 0, referring to the symbol ({circle around(4)}). When data are transferred to the second plane P1 in the fourthdie Die 3 according to the channel order, the following data can betransferred to the third plane P2 of the first die Die 0.

When data corresponding to the third bit L are transferred to all of theplanes included in the first to fourth dies Dies 0 to 3, the way ischanged (Way 0→Way 1). The following data assigned for the third bit Lcan be transmitted to all of the planes included in the fifth to eighthdies Dies 4 to 7. When data are transferred to the third bit (L) on allof the planes on all of the dies Die 0 to 7, the following data assignedfor the second bit (C) can be transmitted. In all of the planes includedin the all of the dies Dies 0 to 7, data can be assigned and storedaccording to the order of bits (the third bit (LSB, L), the second bit(CSB, C), the first bit (MSB, M), i.e., L→C→M).

In summary, the sequence of access to the memory cells according to thefifth method is shown in Table 2 as follows.

TABLE 2 Access Sequence Channel # Plane # Way # Level 0 0 0 0 L 1 1 0 0L 2 2 0 0 L 3 3 0 0 L 4 0 1 0 L . . . . . . . . . . . . . . . 15  3 3 0L 16  0 0 1 L . . . . . . . . . . . . . . . 31  3 3 1 L 32  0 0 0 C . .. . . . . . . . . . . . .

As shown in Table 2, the levels of memory cells to be accessed may bechanged at each completion of turns of the ways, which to be accessedmay be changed at each completion of turns of the planes, which to beaccessed may be changed at each completion of turns of the channels.That is, the controller 30 may access the memory cells according to anaccess hierarchy of the channels, the planes, the ways and levels of thecells. The levels of memory cells may be regarded as the logicalmulti-level pages of those memory cells. The logical multi-level pagesof memory cells to be accessed may be changed at each completion ofturns of the ways. That is, the controller 30 may access the memorycells according to an access hierarchy of the channels, the planes, theways and the logical multi-level pages.

In the fifth method described above, a size of the buffer 38 included inthe controller 30 can be increased in proportion to the number ofchannels (for example, four), like the fourth method. The data istransmitted to each die according to the order of the channels so thatthe fifth method has a greater effect on data transmission speed bysequentially using plural channels as compared to the first methoddescribed above in which the data is transferred to all bits of allplanes of each die and then transmitted to the next die. Further, sincethe fifth method can use plural channels to transmit data into pluraldies before data is transmitted to all the planes included in a singledie as compared with the second method and the third method, datatransmission via a plurality of channels can be overlapped so that datatransmission speed and efficiency can be increased and enhanced. In thefifth method, unlike the fourth method, data are sequentiallytransmitted into all of the dies Die 0 to 7 rather than to some dies(e.g., Dies 0 to 3). Therefore, when the dies Die 0 to 7 are not filledwith data, dummy data can be increased.

FIGS. 15 and 16 illustrate effects of the first to fifth methodsdescribed in FIGS. 10 to 14. FIG. 15 compares speeds in read operationsaccording to the first to fifth methods. FIG. 16 compares speeds inwrite operations according to the first to fifth methods. In FIGS. 15and 16, it is assumed that four dies are coupled with a controllerthrough two channels and two ways. It is also assumed that a second timefor transferring data between a host and a memory system is about twiceas fast (e.g., 2.1 times) than a first time required for transferringdata between the controller and a memory device in the memory system.

Referring to FIG. 15, in the first to fifth methods, there is nodifference between read times (tR) required for reading data from thememory device, between first times (1 s to 8 s) for transferring datafrom the memory device to the controller, and between second times (1 rto 8 r) for data from the memory system to the host. However, the readtimes (tR), the first times (1 s to 8 s) and the second times (1 r to 8r) can be arranged differently according to the first to fifth methods.

Even if times spent on specific operations in a memory system or betweenthe memory system and the host are substantially same, the specificoperations can be carried out at different timings according to thefirst to fifth methods. The difference in the performance of thespecific operations may causes a difference in total times foroutputting data from the four dies through two channels and two ways.

In FIG. 15, it is described that the four dies are coupled via twochannels and two ways. However, in a memory system in which the numberof channels is increased and the number of dies is increased, there canbe a larger difference in the total time when larger data is read inaccordance with the first to fifth methods.

Referring to FIG. 16, times tPROG required for writing data in eachmemory cells and the times (tL/C/M, tL, tC, tM) for transmitting databetween the memory device and the controller are arranged differentlyaccording to the first to fifth methods for transferring data. Accordingto the first to fifth methods, a difference occurs in total timesrequired to transfer the data to the four dies via two channels and twoways. In FIG. 16, it is described that the four dies are coupled via twochannels and two ways. However, when a memory system includes morechannels and more dies, more differences can exist in the total timethan when larger data is read in accordance with the first to fifthmethods.

As described above, not only is there a two-fold difference between afirst rate at which data is transferred between the controller and thememory device within the memory system and a second rate at which datais transferred between the host and the memory system, but also a time(tPROG or tR) for writing or reading data to or from the memory deviceis greater than a time for transferring data among the host, thecontroller and the memory device. Thus, how to transmit data among thehost, the controller and the memory device can affect overallperformance of the memory system (e.g., I/O throughput). In addition,errors may be reduced in the process of transmitting data at a highspeed by reducing interference even though data transmission via pluralchannels can overlap each other.

FIG. 17 shows an operation method for transferring data in a memorysystem.

Referring to FIG. 17, the operation method for data transfer can includesetting a predetermined number of planes in plural planes as a logicalstorage unit (step 82), determining a transmission order of data basedon a first order of plural channels, a second order of the pluralplanes, a third order of plural ways and a fourth order of bits storedin multi-level cell (step 84), and transmitting the data to the at leastone memory device in response to the transmission order (step 86).

The memory system may include at least one memory device capable ofstoring data and a controller for performing a read or write operationin the at least one memory device. Dies in a memory device connected toa controller through a plurality of channels and a plurality of ways ina memory system may include a plurality of planes. The plane may includea plurality of blocks, and the block may include a plurality of cells. Acell may store a multi-level (multi-bit) data. For example, the cell mayinclude a triple level cell (TLC) capable of storing 3-bit data, or aquad level cell (QLC) capable of storing 4-bit data.

In accordance with the embodiment, the controller in the memory systemcan perform each read operation or each write operation in each logicalstorage unit set in the memory device.

The controller included in the memory system can be engaged with amapping unit capable of determining the transmission order of data. Thetransmission order of data may be determined by applying a first orderof the plural channels, a second order of plural planes, a third orderof plural ways, and a fourth order of the bits stored in the multi-levelcells with different priorities. For example, the controller may changethe first order after data are transferred to at least one die based onthe second order, in order to determine the transmission order of datathrough the mapping unit.

In accordance with an embodiment, in determining the transmission orderof data, the controller may change the second order after the transferof data based on the first order is made. After completely transmittingdata to at least one die based on the second order, the controller canchange the third order for data transmission. Then, the fourth order maybe changed after data are transferred to at least one die based on thethird order. For example, the controller 30 may access the memory cellsaccording to an access hierarchy of the channels, the planes, the waysand the logical multi-level pages in the order listed, as described withreference to Table 2.

In accordance with an embodiment, in determining the transfer order ofthe data, the controller can change the fourth order after data aretransferred to at least one die based on the second order. After dataare transferred to at least one die based on the fourth order, thecontroller can change the third order. For example, the controller 30may access the memory cells according to an access hierarchy of thechannels, the planes, the logical multi-level pages and the ways in theorder listed, as described with reference Table 1.

In addition, the controller can use, or refer to, the mapping unit todetermine the transmission order of data based on the first order, thesecond order, the third order, and the fourth order, according to a sizeof data transferred to or from one or more logical storage units. Thetransmission order may be adjusted or changed by a data size.

Adjusting priorities of the first order, the second order, the thirdorder, and the fourth order may bring about different performance andeffects, as the first to fifth methods described in FIGS. 10 to 14.

In FIG. 18, another example of the data processing system including thememory system in accordance with an embodiment is described. FIG. 18schematically illustrates a memory card system to which the memorysystem is applied.

Referring to FIG. 18, the memory card system 6100 may include a memorycontroller 6120, a memory device 6130 and a connector 6110.

The memory controller 6120 may be connected to the memory device 6130embodied by a nonvolatile memory. The memory controller 6120 may beconfigured to access the memory device 6130. By way of example and notlimitation, the memory controller 6120 may be configured to controlread, write, erase and background operations of the memory device 6130.The memory controller 6120 may be configured to provide an interfacebetween the memory device 6130 and a host, and use a firmware forcontrolling the memory device 6130. That is, the memory controller 6120may correspond to the controller 130 of the memory system 110 describedwith reference to FIG. 1, and the memory device 6130 may correspond tothe memory device 150 of the memory system 110 described with referenceto FIG. 1.

Thus, the memory controller 6120 may include a RAM, a processor, a hostinterface, a memory interface and an error correction component. Thememory controller 6120 may further include the elements shown in FIG. 1.

The memory controller 6120 may communicate with an external device, forexample, the host 102 of FIG. 1 through the connector 6110. For example,as described with reference to FIG. 1, the memory controller 6120 may beconfigured to communicate with an external device according to one ormore of various communication protocols such as universal serial bus(USB), multimedia card (MMC), embedded MMC (eMMC), peripheral componentinterconnection (PCI), PCI express (PCIe), Advanced TechnologyAttachment (ATA), Serial-ATA, Parallel-ATA, small computer systeminterface (SCSI), enhanced small disk interface (EDSI), Integrated DriveElectronics (IDE), Firewire, universal flash storage (UFS), WIFI andBluetooth. Thus, the memory system and the data processing system may beapplied to wired/wireless electronic devices, particularly mobileelectronic devices.

The memory device 6130 may be implemented by a nonvolatile memory. Forexample, the memory device 6130 may be implemented by any of variousnonvolatile memory devices such as an erasable and programmable ROM(EPROM), an electrically erasable and programmable ROM (EEPROM), a NANDflash memory, a NOR flash memory, a phase-change RAM (PRAM), a resistiveRAM (ReRAM), a ferroelectric RAM (FRAM) and a spin torque transfermagnetic RAM (STT-MRAM). The memory device 6130 may include a pluralityof dies as in the memory device 150 of FIG. 6.

The memory controller 6120 and the memory device 6130 may be integratedinto a single semiconductor device. For example, the memory controller6120 and the memory device 6130 may be so integrated to form a solidstate driver (SSD). In another embodiment, the memory controller 6120and the memory device 6130 may be integrated to form a memory card suchas a PC card (PCMCIA: Personal Computer Memory Card InternationalAssociation), a compact flash (CF) card, a smart media card (e.g., a SMand a SMC), a memory stick, a multimedia card (e.g., a MMC, a RS-MMC, aMMCmicro and an eMMC), an SD card (e.g., a SD, a miniSD, a microSD and aSDHC) and/or a universal flash storage (UFS).

FIG. 19 is a diagram schematically illustrating another example of thedata processing system including the memory system in accordance with anembodiment.

Referring to FIG. 19, the data processing system 6200 may include amemory device 6230 having one or more nonvolatile memories and a memorycontroller 6220 for controlling the memory device 6230. The dataprocessing system 6200 illustrated in FIG. 19 may serve as a storagemedium such as a memory card (CF, SD, micro-SD or the like) or USBdevice, as described with reference to FIG. 1. The memory device 6230may correspond to the memory device 150 in the memory system 110illustrated in FIG. 1. The memory controller 6220 may correspond to thecontroller 130 in the memory system 110 illustrated in FIG. 1.

The memory controller 6220 may control a read, write or erase operationon the memory device 6230 in response to a request of the host 6210. Thememory controller 6220 may include one or more CPUs 6221, a buffermemory such as RAM 6222, an ECC circuit 6223, a host interface 6224 anda memory interface such as an NVM interface 6225.

The CPU 6221 may control overall operations on the memory device 6230,for example, read, write, file system management, and bad pagemanagement operations. The RAM 6222 may be operated according to controlof the CPU 6221. The RAM 6222 may be used as a work memory, buffermemory or cache memory. When the RAM 6222 is used as a work memory, dataprocessed by the CPU 6221 may be temporarily stored in the RAM 6222.When the RAM 6222 is used as a buffer memory, the RAM 6222 may be usedfor buffering data transmitted to the memory device 6230 from the host6210 or transmitted to the host 6210 from the memory device 6230. Whenthe RAM 6222 is used as a cache memory, the RAM 6222 may assist thelow-speed memory device 6230 to operate at high speed.

The ECC circuit 6223 may correspond to the ECC component 138 of thecontroller 130 illustrated in FIG. 1. As described with reference toFIG. 1, the ECC circuit 6223 may generate an ECC (Error Correction Code)for correcting a fail bit or error bit of data provided from the memorydevice 6230. The ECC circuit 6223 may perform error correction encodingon data provided to the memory device 6230, thereby forming data with aparity bit. The parity bit may be stored in the memory device 6230. TheECC circuit 6223 may perform error correction decoding on data outputtedfrom the memory device 6230. The ECC circuit 6223 may correct an errorusing the parity bit. For example, as described with reference to FIG.1, the ECC circuit 6223 may correct an error using the LDPC code, BCHcode, turbo code, Reed-Solomon code, convolution code, RSC or codedmodulation such as TCM or BCM.

The memory controller 6220 may exchange data with the host 6210 throughthe host interface 6224. The memory controller 6220 may exchange datawith the memory device 6230 through the NVM interface 6225. The hostinterface 6224 may be connected to the host 6210 through a PATA bus,SATA bus, SCSI, USB, PCIe or NAND interface. The memory controller 6220may have a wireless communication function with a mobile communicationprotocol such as WiFi or Long Term Evolution (LTE). The memorycontroller 6220 may be connected to an external device, for example, thehost 6210 or another external device, and then exchange data with theexternal device. Particularly, as the memory controller 6220 isconfigured to communicate with the external device through one or moreof various communication protocols, the memory system and the dataprocessing system in accordance with an embodiment may be applied towired/wireless electronic devices, particularly a mobile electronicdevice.

FIG. 20 is a diagram schematically illustrating another example of thedata processing system including the memory system in accordance with anembodiment. FIG. 20 schematically illustrates an SSD to which the memorysystem is applied.

Referring to FIG. 20, the SSD 6300 may include a controller 6320 and amemory device 6340 including a plurality of nonvolatile memories. Thecontroller 6320 may correspond to the controller 130 in the memorysystem 110 of FIG. 1. The memory device 6340 may correspond to thememory device 150 in the memory system of FIG. 1.

More specifically, the controller 6320 may be connected to the memorydevice 6340 through a plurality of channels CH1 to CHi. The controller6320 may include one or more processors 6321, a buffer memory 6325, anECC circuit 6322, a host interface 6324, and a memory interface, forexample, a nonvolatile memory interface 6326.

The buffer memory 6325 may temporarily store data provided from the host6310 or data provided from a plurality of flash memories NVM included inthe memory device 6340, or temporarily store meta data of the pluralityof flash memories NVM, for example, map data including a mapping table.The buffer memory 6325 may be embodied by any of various volatilememories such as DRAM, SDRAM, DDR SDRAM, LPDDR SDRAM and GRAM ornonvolatile memories such as FRAM, ReRAM, STT-MRAM and PRAM. FIG. 20illustrates that the buffer memory 6325 is disposed in the controller6320. However, the buffer memory 6325 may be disposed externally to thecontroller 6320.

The ECC circuit 6322 may calculate an ECC value of data to be programmedto the memory device 6340 during a program operation. The ECC circuit6322 may perform an error correction operation on data read from thememory device 6340 based on the ECC value during a read operation. TheECC circuit 6322 may perform an error correction operation on datarecovered from the memory device 6340 during a failed data recoveryoperation.

The host interface 6324 may provide an interface function with anexternal device, for example, the host 6310. The nonvolatile memoryinterface 6326 may provide an interface function with the memory device6340 connected through the plurality of channels.

Furthermore, a plurality of SSDs 6300 to which the memory system 110 ofFIG. 1 is applied may be provided to embody a data processing system,for example, RAID (Redundant Array of Independent Disks) system. TheRAID system may include the plurality of SSDs 6300 and a RAID controllerfor controlling the plurality of SSDs 6300. When the RAID controllerperforms a program operation in response to a write command providedfrom the host 6310, the RAID controller may select one or more memorysystems or SSDs 6300 according to a plurality of RAID levels, that is,RAID level information of the write command provided from the host 6310in the SSDs 6300. The RAID controller may output data corresponding tothe write command to the selected SSDs 6300. Furthermore, when the RAIDcontroller performs a read command in response to a read commandprovided from the host 6310, the RAID controller may select one or morememory systems or SSDs 6300 according to a plurality of RAID levels,that is, RAID level information of the read command provided from thehost 6310 in the SSDs 6300. The RAID controller may provide data readfrom the selected SSDs 6300 to the host 6310.

FIG. 21 is a diagram schematically illustrating another example of thedata processing system including the memory system in accordance with anembodiment. FIG. 21 schematically illustrates an embedded Multi-MediaCard (eMMC) to which the memory system is applied.

Referring to FIG. 21, the eMMC 6400 may include a controller 6430 and amemory device 6440 embodied by one or more NAND flash memories. Thecontroller 6430 may correspond to the controller 130 in the memorysystem 110 of FIG. 1. The memory device 6440 may correspond to thememory device 150 in the memory system 110 of FIG. 1.

More specifically, the controller 6430 may be connected to the memorydevice 6440 through a plurality of channels. The controller 6430 mayinclude one or more cores 6432, a host interface 6431 and a memoryinterface, for example, a NAND interface 6433.

The core 6432 may control overall operations of the eMMC 6400. The hostinterface 6431 may provide an interface function between the controller6430 and the host 6410. The NAND interface 6433 may provide an interfacefunction between the memory device 6440 and the controller 6430. Forexample, the host interface 6431 may serve as a parallel interface, forexample, MMC interface as described with reference to FIG. 1.Furthermore, the host interface 6431 may serve as a serial interface,for example, UHS ((Ultra High Speed)-I/UHS-II) interface.

FIGS. 22 to 25 are diagrams schematically illustrating other examples ofthe data processing system including the memory system in accordancewith embodiments. FIGS. 22 to 25 schematically illustrate UFS (UniversalFlash Storage) systems to which the memory system is applied.

Referring to FIGS. 22 to 26, the UFS systems 6500, 6600, 6700, 6800 mayinclude hosts 6510, 6610, 6710, 6810, UFS devices 6520, 6620, 6720, 6820and UFS cards 6530, 6630, 6730, 6830, respectively. The hosts 6510,6610, 6710, 6810 may serve as application processors of wired/wirelesselectronic devices or particularly mobile electronic devices, the UFSdevices 6520, 6620, 6720, 6820 may serve as embedded UFS devices, andthe UFS cards 6530, 6630, 6730, 6830 may serve as external embedded UFSdevices or removable UFS cards.

The hosts 6510, 6610, 6710, 6810, the UFS devices 6520, 6620, 6720, 6820and the UFS cards 6530, 6630, 6730, 6830 in the respective UFS systems6500, 6600, 6700, 6800 may communicate with external devices, forexample, wired/wireless electronic devices, particularly mobileelectronic devices through UFS protocols, and the UFS devices 6520,6620, 6720, 6820 and the UFS cards 6530, 6630, 6730, 6830 may beembodied by the memory system 110 illustrated in FIG. 1. For example, inthe UFS systems 6500, 6600, 6700, 6800, the UFS devices 6520, 6620,6720, 6820 may be embodied in the form of the data processing system6200, the SSD 6300 or the eMMC 6400 described with reference to FIGS. 19to 21, and the UFS cards 6530, 6630, 6730, 6830 may be embodied in theform of the memory card system 6100 described with reference to FIG. 18.

Furthermore, in the UFS systems 6500, 6600, 6700, 6800, the hosts 6510,6610, 6710, 6810, the UFS devices 6520, 6620, 6720, 6820 and the UFScards 6530, 6630, 6730, 6830 may communicate with each other through anUFS interface, for example, MIPI M-PHY and MIPI UniPro (UnifiedProtocol) in MIPI (Mobile Industry Processor Interface). Furthermore,the UFS devices 6520, 6620, 6720, 6820 and the UFS cards 6530, 6630,6730, 6830 may communicate with each other through various protocolsother than the UFS protocol, for example, an UFDs, a MMC, a SD, amini-SD, and a micro-SD.

In the UFS system 6500 illustrated in FIG. 22, each of the host 6510,the UFS device 6520 and the UFS card 6530 may include UniPro. The host6510 may perform a switching operation in order to communicate with theUFS device 6520 and the UFS card 6530. In particular, the host 6510 maycommunicate with the UFS device 6520 or the UFS card 6530 through linklayer switching, for example, L3 switching at the UniPro. The UFS device6520 and the UFS card 6530 may communicate with each other through linklayer switching at the UniPro of the host 6510. In the embodiment ofFIG. 22, the configuration in which one UFS device 6520 and one UFS card6530 are connected to the host 6510 is illustrated by way of example.However, in another embodiment, a plurality of UFS devices and UFS cardsmay be connected in parallel or in the form of a star to the host 6510.The form of a star is an arrangement where a single centralizedcomponent is coupled to plural devices for parallel processing. Aplurality of UFS cards may be connected in parallel or in the form of astar to the UFS device 6520 or connected in series or in the form of achain to the UFS device 6520.

In the UFS system 6600 illustrated in FIG. 23, each of the host 6610,the UFS device 6620 and the UFS card 6630 may include UniPro, and thehost 6610 may communicate with the UFS device 6620 or the UFS card 6630through a switching module 6640 performing a switching operation, forexample, through the switching module 6640 which performs link layerswitching at the UniPro, for example, L3 switching. The UFS device 6620and the UFS card 6630 may communicate with each other through link layerswitching of the switching module 6640 at UniPro. In the embodiment ofFIG. 23, the configuration in which one UFS device 6620 and one UFS card6630 are connected to the switching module 6640 is illustrated by way ofexample. However, in another embodiment, a plurality of UFS devices andUFS cards may be connected in parallel or in the form of a star to theswitching module 6640, and a plurality of UFS cards may be connected inseries or in the form of a chain to the UFS device 6620.

In the UFS system 6700 illustrated in FIG. 24, each of the host 6710,the UFS device 6720 and the UFS card 6730 may include UniPro, and thehost 6710 may communicate with the UFS device 6720 or the UFS card 6730through a switching module 6740 performing a switching operation, forexample, through the switching module 6740 which performs link layerswitching at the UniPro, for example, L3 switching. The UFS device 6720and the UFS card 6730 may communicate with each other through link layerswitching of the switching module 6740 at the UniPro, and the switchingmodule 6740 may be integrated as one module with the UFS device 6720inside or outside the UFS device 6720. In the embodiment of FIG. 24, theconfiguration in which one UFS device 6720 and one UFS card 6730 areconnected to the switching module 6740 is illustrated by way of example.However, in another embodiment, a plurality of modules each includingthe switching module 6740 and the UFS device 6720 may be connected inparallel or in the form of a star to the host 6710 or connected inseries or in the form of a chain to each other. Furthermore, a pluralityof UFS cards may be connected in parallel or in the form of a star tothe UFS device 6720.

In the UFS system 6800 illustrated in FIG. 25, each of the host 6810,the UFS device 6820 and the UFS card 6830 may include M-PHY and UniPro.The UFS device 6820 may perform a switching operation in order tocommunicate with the host 6810 and the UFS card 6830. In particular, theUFS device 6820 may communicate with the host 6810 or the UFS card 6830through a switching operation between the M-PHY and UniPro module forcommunication with the host 6810 and the M-PHY and UniPro module forcommunication with the UFS card 6830, for example, through a target ID(Identifier) switching operation. The host 6810 and the UFS card 6830may communicate with each other through target ID switching between theM-PHY and UniPro modules of the UFS device 6820. In the embodiment ofFIG. 25, the configuration in which one UFS device 6820 is connected tothe host 6810 and one UFS card 6830 is connected to the UFS device 6820is illustrated by way of example. However, a plurality of UFS devicesmay be connected in parallel or in the form of a star to the host 6810,or connected in series or in the form of a chain to the host 6810, and aplurality of UFS cards may be connected in parallel or in the form of astar to the UFS device 6820, or connected in series or in the form of achain to the UFS device 6820.

FIG. 26 is a diagram schematically illustrating another example of thedata processing system including the memory system in accordance with anembodiment of the disclosure. FIG. 26 is a diagram schematicallyillustrating a user system to which the memory system is applied.

Referring to FIG. 26, the user system 6900 may include an applicationprocessor 6930, a memory module 6920, a network module 6940, a storagemodule 6950 and a user interface 6910.

More specifically, the application processor 6930 may drive componentsincluded in the user system 6900, for example, an OS, and includecontrollers, interfaces and a graphic engine which control thecomponents included in the user system 6900. The application processor6930 may be provided as System-on-Chip (SoC).

The memory module 6920 may be used as a main memory, work memory, buffermemory or cache memory of the user system 6900. The memory module 6920may include a volatile RAM such as DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM,DDR3 SDRAM, LPDDR SDARM, LPDDR2 SDRAM or LPDDR3 SDRAM or a nonvolatileRAM such as PRAM, ReRAM, MRAM or FRAM. For example, the applicationprocessor 6930 and the memory module 6920 may be packaged and mounted,based on P0P (Package on Package).

The network module 6940 may communicate with external devices. Forexample, the network module 6940 may not only support wiredcommunication, but also support various wireless communication protocolssuch as code division multiple access (CDMA), global system for mobilecommunication (GSM), wideband CDMA (WCDMA), CDMA-2000, time divisionmultiple access (TDMA), long term evolution (LTE), worldwideinteroperability for microwave access (Wimax), wireless local areanetwork (WLAN), ultra-wideband (UWB), Bluetooth, wireless display(WI-DI), thereby communicating with wired/wireless electronic devices,particularly mobile electronic devices. Therefore, the memory system andthe data processing system, in accordance with an embodiment of thedisclosure, can be applied to wired/wireless electronic devices. Thenetwork module 6940 may be included in the application processor 6930.

The storage module 6950 may store data, for example, data received fromthe application processor 6930, and then may transmit the stored data tothe application processor 6930. The storage module 6950 may be embodiedby a nonvolatile semiconductor memory device such as a phase-change RAM(PRAM), a magnetic RAM (MRAM), a resistive RAM (ReRAM), a NAND flash, aNOR flash and a 3D NAND flash, and provided as a removable storagemedium such as a memory card or external drive of the user system 6900.The storage module 6950 may correspond to the memory system 110described with reference to FIG. 1. Furthermore, the storage module 6950may be embodied as an SSD, an eMMC and an UFS as described above withreference to FIGS. 20 to 25.

The user interface 6910 may include interfaces for inputting data orcommands to the application processor 6930 or outputting data to anexternal device. For example, the user interface 6910 may include userinput interfaces such as a keyboard, a keypad, a button, a touch panel,a touch screen, a touch pad, a touch ball, a camera, a microphone, agyroscope sensor, a vibration sensor and a piezoelectric element, anduser output interfaces such as a liquid crystal display (LCD), anorganic light emitting diode (OLED) display device, an active matrixOLED (AMOLED) display device, an LED, a speaker and a monitor.

Furthermore, when the memory system 110 of FIG. 1 is applied to a mobileelectronic device of the user system 6900, the application processor6930 may control overall operations of the mobile electronic device. Thenetwork module 6940 may serve as a communication module for controllingwired/wireless communication with an external device. The user interface6910 may display data processed by the application processor 6930 on adisplay/touch module of the mobile electronic device. Further, the userinterface 6910 may support a function of receiving data from the touchpanel.

A memory system, a data processing system and an operation methodthereof in accordance with embodiments of the disclosure can provide anapparatus and a method for parallel data transfer therein via aplurality of channels or a plurality of ways therein, to enhanceefficiency of data transmission.

The disclosure can provide an apparatus and a method for performing datatransfer in a memory system quickly and effectively so that it can beeasy for the memory system to secure a window for writing or readingdata to or from a nonvolatile memory cell in a memory device. Thereliability of data transfer procedure can be improved.

While the disclosure illustrates and describes specific embodiments, itwill be apparent to those skilled in the art in light of the presentdisclosure that various changes and modifications may be made withoutdeparting from the spirit and scope of the invention as defined in thefollowing claims.

1. A memory system comprising: at least one memory device, includingplural planes, each capable of storing data; and a controller coupledwith the at least one memory device via plural channels and plural ways,and suitable for transmitting data to the at least one memory device fora read operation or a write operation in response to a transmissionorder, wherein the plural planes include plural blocks, respectively andthe plural blocks include multi-level cells, respectively, and whereinthe controller includes a mapping circuitry for determining thetransmission order of the data based on a first order of the pluralchannels, a second order of the plural planes, a third order of theplural ways and a fourth order of bits stored in the multi-level cells.2. The memory system according to claim 1, wherein the controller sets apredetermined number of planes in the plural planes as a logical storageunit, and wherein the read operation or the write operation is performedon a logical storage unit basis.
 3. The memory system according to claim2, wherein the mapping circuitry sequentially determines thetransmission order in response to the first to fourth orders in eachlogical storage unit.
 4. The memory system according to claim 3, whereinthe at least one memory device includes a first buffer for temporarilystoring data having a size corresponding to that of the logical storageunit, and wherein the controller includes a second buffer for storingdata larger than that of the first buffer.
 5. The memory systemaccording to claim 3, wherein the mapping circuitry changes the firstorder after the data are transmitted based on the second order.
 6. Thememory system according to claim 5, wherein the mapping circuitrychanges the third order after the data are transmitted based on thefirst order, and changes the fourth order after the data are transmittedbased on the third order.
 7. The memory system according to claim 5,wherein the mapping circuitry changes the fourth order after the dataare transmitted based on the first order, and changes the third orderafter the data are transmitted based on the fourth order.
 8. The memorysystem according to claim 3, wherein the mapping circuitry changes thesecond order after the data are transmitted based on the first order. 9.The memory system according to claim 8, wherein the mapping circuitrychanges the third order after the data are transmitted based on thesecond order, and changes the fourth order after the data aretransmitted based on the third order.
 10. The memory system according toclaim 8, wherein the mapping circuitry changes the fourth order afterthe data are transmitted based on the second order, and changes thethird order after the data are transmitted based on the fourth order.11. The memory system according to claim 1, wherein the mappingcircuitry is included in a memory interface engaged with the at leastone memory device.
 12. The memory system according to claim 1, whereinthe mapping circuitry is included in a host interface engaged with ahost or an external device.
 13. A method for operating a memory systemincluding at least one memory device, including plural planes, eachcapable of storing data, and a controller coupled with the at least onememory device via plural channels and plural ways, and suitable forperforming a read operation or a write operation, wherein the pluralplanes include plural blocks respectively and the plural blocks includemulti-level cells respectively, the method comprising: determining atransmission order of data based on a first order of the pluralchannels, a second order of the plural planes, a third order of theplural ways and a fourth order of bits stored in the multi-level cells;and transmitting the data to the at least one memory device in responseto the transmission order.
 14. The method according to claim 13, furthercomprising: setting a predermined number of planes in the plural planesas a logical storage unit, and performing the read operation or thewrite operation on a logical storage unit basis.
 15. The methodaccording to claim 14, wherein the transmission order is determinedsequentially in response to the first to fourth orders in each logicalstorage unit.
 16. The method according to claim 15, wherein, in thetransmission order, the first order is changed after the data aretransmitted based on the second order.
 17. The method according to claim15, wherein, in the transmission order, the second order is changedafter the data are transmitted based on the first order.
 18. The methodaccording to claim 17, wherein, in the transmission order, the thirdorder is changed after the data are transmitted based on the secondorder, and the fourth order is changed after the data are transmittedbased on the third order.
 19. The method according to claim 17, wherein,in the transmission order, the fourth order is changed after the dataare transmitted based on the second order, and the third order ischanged after the data are transmitted based on the fourth order. 20.The method according to claim 17, wherein the transmission orderdetermined based on the first to fourth orders can be varied accordingto a size of data transmitted from or to the at least one memory device.